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Power Field-Effect Transistor, 17.2A I(D), 100V, 0.019ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN
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SUM90P10-19L-E3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
22M8995
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Newark | P Channel Mosfet, -100V, 90A To-263, Channel Type:P Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:90A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SUM90P10-19L-E3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1435 |
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$2.5000 / $2.9500 | Buy Now |
DISTI #
29X0569
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Newark | Mosfet, P Channel, -100V, 90A, To-263-3, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:90A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:375W Rohs Compliant: Yes |Vishay SUM90P10-19L-E3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$2.0900 / $2.6800 | Buy Now |
DISTI #
SUM90P10-19L-E3
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Avnet Americas | Power MOSFET, P Channel, 100 V, 90 A, 19 MilliOhms, TO-263 (D2PAK), 3 Pins, Surface Mount - Tape and Reel (Alt: SUM90P10-19L-E3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 13 Weeks, 0 Days Container: Reel | 2400 |
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$1.9059 / $2.4500 | Buy Now |
DISTI #
22M8995
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Avnet Americas | Power MOSFET, P Channel, 100 V, 90 A, 19 MilliOhms, TO-263 (D2PAK), 3 Pins, Surface Mount - Product that comes on tape, but is not reeled (Alt: 22M8995) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 4 Days Container: Ammo Pack | 1125 Partner Stock |
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$2.9500 / $4.7400 | Buy Now |
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Bristol Electronics | 83 |
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RFQ | ||
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Bristol Electronics | 49 |
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RFQ | ||
DISTI #
SUM90P10-19L-E3
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TME | Transistor: P-MOSFET, unipolar, -100V, -90A, Idm: -90A, 125W Min Qty: 1 | 645 |
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$2.7600 / $4.1200 | Buy Now |
DISTI #
SMC-SUM90P10-19L-E3
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Sensible Micro Corporation | Transistor: P-Mosfet, Unipolar, -100V, -90A, Idm: -90A, 125W RoHS: Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 2019 | 50 |
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$2.2680 / $2.4570 | RFQ |
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Chip 1 Exchange | INSTOCK | 4644 |
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RFQ | |
DISTI #
SUM90P10-19L-E3
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Avnet Asia | Power MOSFET, P Channel, 100 V, 90 A, 19 MilliOhms, TO-263 (D2PAK), 3 Pins, Surface Mount (Alt: SUM90P10-19L-E3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 15 Weeks, 0 Days | 0 |
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RFQ |
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SUM90P10-19L-E3
Vishay Intertechnologies
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Datasheet
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Compare Parts:
SUM90P10-19L-E3
Vishay Intertechnologies
Power Field-Effect Transistor, 17.2A I(D), 100V, 0.019ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | ROHS COMPLIANT, TO-263, 3 PIN | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 10 Weeks, 4 Days | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 245 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 17.2 A | |
Drain-source On Resistance-Max | 0.019 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 375 W | |
Pulsed Drain Current-Max (IDM) | 90 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |