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Power Field-Effect Transistor,
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
80AK5472
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Newark | Mosfet, N-Ch, 250V, 63A, To-220Ab Rohs Compliant: Yes |Vishay SUP10250E-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 277 |
|
$1.6700 / $2.7700 | Buy Now |
DISTI #
SUP10250E-GE3
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Avnet Americas | N-CHANNEL 250-V (D-S) 175C MOSFET - Tape and Reel (Alt: SUP10250E-GE3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 26 Weeks, 0 Days Container: Reel | 0 |
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$1.3580 | Buy Now |
DISTI #
78-SUP10250E-GE3
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Mouser Electronics | MOSFETs 250V Vds 20V Vgs TO-220 RoHS: Compliant | 3332 |
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$1.2900 / $2.3200 | Buy Now |
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Future Electronics | MOSFET N Ch 250Vds 20Vgs RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Lead time: 32 Weeks | 0 |
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$1.3700 | Buy Now |
DISTI #
SUP10250E-GE3
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TTI | MOSFETs 250V Vds 20V Vgs TO-220 RoHS: Compliant pbFree: Pb-Free Min Qty: 500 Package Multiple: 50 Container: Tube | Americas - 0 |
|
$1.3000 / $1.3800 | Buy Now |
DISTI #
SUP10250E-GE3
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TME | Transistor: N-MOSFET, unipolar, 250V, 36.3A, 125W, TO220AB Min Qty: 1 | 469 |
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$2.3400 / $3.2800 | Buy Now |
DISTI #
C1S803605335115
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Chip1Stop | N-Channel 250 V (D-S) 175 C MOSFET RoHS: Compliant pbFree: Yes | 57 |
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$1.6800 / $2.2900 | Buy Now |
DISTI #
SUP10250E-GE3
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EBV Elektronik | (Alt: SUP10250E-GE3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 29 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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SUP10250E-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SUP10250E-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 26 Weeks | |
Date Of Intro | 2016-07-07 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 180 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 250 V | |
Drain Current-Max (ID) | 63 A | |
Drain-source On Resistance-Max | 0.0325 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 18 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 150 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 204 ns | |
Turn-on Time-Max (ton) | 212 ns |