Datasheets
SUP50010E-GE3 by:

Power Field-Effect Transistor,

Part Details for SUP50010E-GE3 by Vishay Intertechnologies

Overview of SUP50010E-GE3 by Vishay Intertechnologies

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Price & Stock for SUP50010E-GE3

Part # Distributor Description Stock Price Buy
DISTI # 54AH9659
Newark Mosfet, 60V, 150A, 175Deg C, 375W, Transistor Polarity:N Channel, Continuous Drain Current Id:150A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.00166Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Vishay SUP50010E-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $3.3600
  • 10 $2.8300
  • 25 $2.7400
  • 50 $2.5200
  • 100 $2.2900
  • 500 $2.0600
$2.0600 / $3.3600 Buy Now
DISTI # SUP50010E-GE3
Avnet Americas Power MOSFET, N Channel, 60 V, 150 A, 0.00166 ohm, TO-220AB, Through Hole (Alt: SUP50010E-GE3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 17 Weeks, 0 Days 0
  • 500 $2.1882
$2.1882 Buy Now
DISTI # 78-SUP50010E-GE3
Mouser Electronics MOSFET 60V Vds, 20V Vgs TO-220AB RoHS: Compliant 730
  • 1 $3.2300
  • 10 $2.9500
  • 25 $2.5600
  • 100 $2.2000
  • 250 $2.0800
  • 500 $1.9900
  • 1,000 $1.5700
  • 5,000 $1.5000
$1.5000 / $3.2300 Buy Now
Future Electronics Single N-Channel 60 V 2 mOhm Through Hole TrenchFET® Power Mosfet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $1.6700
  • 200 $1.6200
  • 500 $1.5900
  • 1,250 $1.5600
  • 2,000 $1.5100
$1.5100 / $1.6700 Buy Now
Future Electronics Single N-Channel 60 V 2 mOhm Through Hole TrenchFET® Power Mosfet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $1.6700
  • 200 $1.6200
  • 500 $1.5900
  • 1,250 $1.5600
  • 2,000 $1.5100
$1.5100 / $1.6700 Buy Now
Future Electronics Single N-Channel 60 V 2 mOhm Through Hole TrenchFET® Power Mosfet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Container: Reel 0
Reel
  • 500 $1.5900
  • 1,000 $1.5700
  • 1,500 $1.5500
  • 2,000 $1.5400
  • 2,500 $1.5100
$1.5100 / $1.5900 Buy Now
DISTI # SUP50010E-GE3
TTI MOSFET 60V Vds, 20V Vgs TO-220AB pbFree: Pb-Free Min Qty: 500 Package Multiple: 50 Container: Tube Americas - 0
  • 500 $1.6200
  • 1,000 $1.5700
  • 2,000 $1.5400
  • 5,000 $1.5100
$1.5100 / $1.6200 Buy Now
DISTI # SUP50010E-GE3
Avnet Americas Power MOSFET, N Channel, 60 V, 150 A, 0.00166 ohm, TO-220AB, Through Hole (Alt: SUP50010E-GE3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 17 Weeks, 0 Days 0
  • 500 $2.1882
$2.1882 Buy Now
DISTI # SUP50010E-GE3
TME Transistor: N-MOSFET, TrenchFET®, unipolar, 60V, 150A, Idm: 500A Min Qty: 1 0
  • 1 $3.3200
  • 10 $2.9900
  • 50 $2.6300
  • 250 $2.3700
  • 1,000 $2.1300
$2.1300 / $3.3200 RFQ
DISTI # SUP50010E-GE3
Avnet Americas Power MOSFET, N Channel, 60 V, 150 A, 0.00166 ohm, TO-220AB, Through Hole (Alt: SUP50010E-GE3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 17 Weeks, 0 Days 0
  • 500 $2.1882
$2.1882 Buy Now
DISTI # 3019168
element14 Asia-Pacific MOSFET, 60V, 150A, 175DEG C, 375W RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $3.3934
  • 10 $2.7617
  • 100 $2.1814
  • 500 $2.0786
  • 1,000 $1.7407
$1.7407 / $3.3934 Buy Now
DISTI # 3019168
Farnell MOSFET, 60V, 150A, 175DEG C, 375W RoHS: Compliant Min Qty: 1 Lead time: 20 Weeks, 1 Days Container: Each 0
  • 1 $3.6352
  • 10 $2.6449
  • 100 $2.0808
  • 500 $1.9805
  • 1,000 $1.6546
$1.6546 / $3.6352 Buy Now

Part Details for SUP50010E-GE3

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SUP50010E-GE3 Part Data Attributes

SUP50010E-GE3 Vishay Intertechnologies
Buy Now Datasheet
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SUP50010E-GE3 Vishay Intertechnologies Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 17 Weeks
Date Of Intro 2018-10-10
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 180 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 150 A
Drain-source On Resistance-Max 0.002 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 85 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 500 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 126 ns
Turn-on Time-Max (ton) 80 ns

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