Part Details for SUP85N10-10-E3 by Vishay Siliconix
Overview of SUP85N10-10-E3 by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SUP85N10-10-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SUP85N10-10-E3-ND
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DigiKey | MOSFET N-CH 100V 85A TO220AB Min Qty: 1 Lead time: 15 Weeks Container: Tube |
370 In Stock |
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$3.1019 / $7.1600 | Buy Now |
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Quest Components | 85 A, 100 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 2 |
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$3.4200 | Buy Now |
Part Details for SUP85N10-10-E3
SUP85N10-10-E3 CAD Models
SUP85N10-10-E3 Part Data Attributes
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SUP85N10-10-E3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SUP85N10-10-E3
Vishay Siliconix
Trans MOSFET N-CH 100V 85A 3-Pin(3+Tab) TO-220AB
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | TO-220AB | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 280 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 85 A | |
| Drain-source On Resistance-Max | 0.0105 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 250 W | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for SUP85N10-10-E3
This table gives cross-reference parts and alternative options found for SUP85N10-10-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SUP85N10-10-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF540N | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | SUP85N10-10-E3 vs IRF540N |
| IRF511-010 | Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | SUP85N10-10-E3 vs IRF511-010 |
| IRF540NPBF | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | SUP85N10-10-E3 vs IRF540NPBF |
| IRF540N | 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | SUP85N10-10-E3 vs IRF540N |
| IRF2807PBF | Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | Infineon Technologies AG | SUP85N10-10-E3 vs IRF2807PBF |
| IRF513-006 | Power Field-Effect Transistor, 4.9A I(D), 80V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | SUP85N10-10-E3 vs IRF513-006 |
| IRF513-001 | Power Field-Effect Transistor, 4.9A I(D), 80V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | SUP85N10-10-E3 vs IRF513-001 |
| MTP4N08 | 4A, 80V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | SUP85N10-10-E3 vs MTP4N08 |
| IRF511-006 | Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | SUP85N10-10-E3 vs IRF511-006 |
| SUM90N10-8M2P-E3 | Power Field-Effect Transistor, 90A I(D), 100V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SUP85N10-10-E3 vs SUM90N10-8M2P-E3 |