Datasheets
SUP90140E-GE3 by:

Power Field-Effect Transistor, 90A I(D), 200V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

Part Details for SUP90140E-GE3 by Vishay Intertechnologies

Overview of SUP90140E-GE3 by Vishay Intertechnologies

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Price & Stock for SUP90140E-GE3

Part # Distributor Description Stock Price Buy
DISTI # 86Y1095
Newark Mosfet, N-Ch, 200V, 90A, To-220Ab-3, Transistor Polarity:N Channel, Continuous Drain Current Id:90A, Drain Source Voltage Vds:200V, On Resistance Rds(On):0.0138Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Vishay SUP90140E-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $3.3400
  • 10 $2.8500
  • 25 $2.7500
  • 50 $2.5400
  • 100 $2.3200
  • 500 $1.9800
$1.9800 / $3.3400 Buy Now
DISTI # SUP90140E-GE3
Avnet Americas Trans MOSFET N-CH 200V 90A 3-Pin TO-220AB - Tape and Reel (Alt: SUP90140E-GE3) RoHS: Not Compliant Min Qty: 500 Package Multiple: 500 Lead time: 38 Weeks, 0 Days Container: Reel 0
  • 500 $2.1762
$2.1762 Buy Now
DISTI # 78-SUP90140E-GE3
Mouser Electronics MOSFET 200V Vds 20V Vgs TO-220 RoHS: Compliant 881
  • 1 $3.2100
  • 10 $2.8900
  • 25 $2.5500
  • 100 $2.1900
  • 250 $2.1600
  • 500 $1.9800
  • 1,000 $1.5600
  • 5,000 $1.5000
$1.5000 / $3.2100 Buy Now
Future Electronics N-Channel 200 V 17 mOhm 375 W ThunderFET Power Mosfet - TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Container: Box 0
Box
  • 500 $1.6200
  • 1,000 $1.5900
  • 1,500 $1.5800
  • 2,000 $1.5700
  • 2,500 $1.5400
$1.5400 / $1.6200 Buy Now
Future Electronics N-Channel 200 V 17 mOhm 375 W ThunderFET Power Mosfet - TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Container: Box 0
Box
  • 500 $1.6200
  • 1,000 $1.5900
  • 1,500 $1.5800
  • 2,000 $1.5700
  • 2,500 $1.5400
$1.5400 / $1.6200 Buy Now
DISTI # SUP90140E-GE3
TTI MOSFET 200V Vds 20V Vgs TO-220 pbFree: Pb-Free Min Qty: 500 Package Multiple: 500 Container: Reel Americas - 0
  • 500 $1.7000
  • 1,000 $1.5900
  • 2,000 $1.5600
  • 3,000 $1.5300
  • 5,000 $1.5000
$1.5000 / $1.7000 Buy Now
DISTI # SUP90140E-GE3
Avnet Americas Trans MOSFET N-CH 200V 90A 3-Pin TO-220AB - Tape and Reel (Alt: SUP90140E-GE3) RoHS: Not Compliant Min Qty: 500 Package Multiple: 500 Lead time: 38 Weeks, 0 Days Container: Reel 0
  • 500 $2.1762
$2.1762 Buy Now
DISTI # SUP90140E-GE3
TME Transistor: N-MOSFET, TrenchFET®, unipolar, 200V, 90A, Idm: 240A Min Qty: 1 0
  • 1 $3.6100
  • 10 $3.2500
  • 50 $2.8700
  • 250 $2.5800
  • 1,000 $2.3300
$2.3300 / $3.6100 RFQ
Chip1Cloud MOSFET N-CH 200V 90A TO220AB 3540
RFQ
DISTI # SUP90140E-GE3
EBV Elektronik Trans MOSFET N-CH 200V 90A 3-Pin TO-220AB (Alt: SUP90140E-GE3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 5 Weeks, 4 Days EBV - 0
Buy Now
DISTI # 2576517
element14 Asia-Pacific MOSFET, N-CH, 200V, 90A, TO-220AB-3 RoHS: Compliant Min Qty: 1 Container: Each 500
  • 1 $3.4798
  • 10 $2.9331
  • 100 $2.3716
  • 500 $2.1056
  • 1,000 $1.8027
  • 2,000 $1.7215
$1.7215 / $3.4798 Buy Now
DISTI # 2576517
Farnell MOSFET, N-CH, 200V, 90A, TO-220AB-3 RoHS: Compliant Min Qty: 500 Lead time: 41 Weeks, 1 Days Container: Each 495
  • 500 $2.0673
$2.0673 Buy Now

Part Details for SUP90140E-GE3

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SUP90140E-GE3 Part Data Attributes:

SUP90140E-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SUP90140E-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 90A I(D), 200V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 38 Weeks
Date Of Intro 2016-05-02
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 180 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 90 A
Drain-source On Resistance-Max 0.018 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 240 A
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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