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Part Details for T2N7002AK,LM by Toshiba America Electronic Components
Results Overview of T2N7002AK,LM by Toshiba America Electronic Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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T2N7002AK,LM Information
T2N7002AK,LM by Toshiba America Electronic Components is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for T2N7002AK,LM
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
T2N7002AK,LM
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Avnet Americas | Trans MOSFET N-CH 60V 0.2A 3-Pin SOT-23 - Tape and Reel (Alt: T2N7002AK,LM) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.0135 / $0.0153 | Buy Now |
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DISTI #
T2N7002AK,LM(B
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Avnet Asia | Trans MOSFET N-CH 60V 0.2A 3-Pin SOT-23 (Alt: T2N7002AK,LM(B) RoHS: Compliant Min Qty: 24000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days | 0 |
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RFQ |
Part Details for T2N7002AK,LM
T2N7002AK,LM CAD Models
T2N7002AK,LM Part Data Attributes
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T2N7002AK,LM
Toshiba America Electronic Components
Buy Now
Datasheet
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T2N7002AK,LM
Toshiba America Electronic Components
MOSFET N-CH 60V 0.2A
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | SOT-23, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 32 Weeks | |
| Samacsys Manufacturer | Toshiba | |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.2 A | |
| Drain-source On Resistance-Max | 4.7 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 0.7 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1 W | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |