Datasheets
T9G0121203DH by: Powerex Power Semiconductors

Silicon Controlled Rectifier, 1884A I(T)RMS, 1200000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, T9G, 3 PIN

Part Details for T9G0121203DH by Powerex Power Semiconductors

Overview of T9G0121203DH by Powerex Power Semiconductors

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for T9G0121203DH

Part # Distributor Description Stock Price Buy
DISTI # 48F7259
Newark Scr Thyristor, 1.88Ka, 1.2Kv, T 9G, Scr Module Type:Single Scr, Peak Repetitive Off State Voltage:1.2Kv, Gate Trigger Current Max:200Ma, Average Forward Current:1.2Ka, On State Rms Current:1.88Ka, Gate Trigger Voltage Max:3V Rohs Compliant: Yes |Powerex T9G0121203DH Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 35
  • 1 $201.9000
$201.9000 Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 2
  • 1 $153.0800
  • 100 $114.8100
  • 1,000 $99.5000
$99.5000 / $153.0800 Buy Now
DISTI # 6508832
element14 Asia-Pacific SCR THYRISTOR, 1.88KA, 1.2KV, T 9G RoHS: Compliant Min Qty: 1 Container: Each 41
  • 1 $224.0883
  • 5 $213.6264
  • 10 $209.3552
$209.3552 / $224.0883 Buy Now
DISTI # 6508832
Farnell SCR THYRISTOR, 1.88KA, 1.2KV, T 9G RoHS: Compliant Min Qty: 1 Lead time: 17 Weeks, 4 Days Container: Each 41
  • 1 $211.1731
$211.1731 Buy Now

Part Details for T9G0121203DH

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T9G0121203DH Part Data Attributes

T9G0121203DH Powerex Power Semiconductors
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T9G0121203DH Powerex Power Semiconductors Silicon Controlled Rectifier, 1884A I(T)RMS, 1200000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, T9G, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer POWEREX INC
Package Description T9G, 3 PIN
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.30.00.80
Circuit Commutated Turn-off Time-Nom 350 µs
Configuration SINGLE
Critical Rate of Rise of Off-State Voltage-Min 300 V/us
DC Gate Trigger Current-Max 200 mA
DC Gate Trigger Voltage-Max 3 V
JESD-30 Code O-CEDB-N2
Leakage Current-Max 75 mA
Non-Repetitive Pk On-state Cur 27000 A
Number of Elements 1
Number of Terminals 2
On-state Current-Max 1200000 A
Operating Temperature-Max 125 °C
Operating Temperature-Min -40 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style DISK BUTTON
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
RMS On-state Current-Max 1884 A
Repetitive Peak Off-state Voltage 1200 V
Repetitive Peak Reverse Voltage 1200 V
Surface Mount YES
Terminal Form NO LEAD
Terminal Position END
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Trigger Device Type SCR

Alternate Parts for T9G0121203DH

This table gives cross-reference parts and alternative options found for T9G0121203DH. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of T9G0121203DH, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
ST1230C12K0 Silicon Controlled Rectifier, 3200A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, KPUK-2 Vishay Semiconductors T9G0121203DH vs ST1230C12K0
N490CH12 Silicon Controlled Rectifier, 2307.9A I(T)RMS, 495000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element IXYS Corporation T9G0121203DH vs N490CH12
ST1230C12K0 Silicon Controlled Rectifier, 1700000mA I(T), 1200V V(DRM), PACKAGE-3 Vishay Intertechnologies T9G0121203DH vs ST1230C12K0
ST1230C12K0PBF Silicon Controlled Rectifier, 3200A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, KPUK-2 International Rectifier T9G0121203DH vs ST1230C12K0PBF
N510CH12 Silicon Controlled Rectifier, 2433.5 A, 1200 V, SCR IXYS UK Westcode T9G0121203DH vs N510CH12
Part Number Description Manufacturer Compare
N600CH10 Silicon Controlled Rectifier, 2826 A, 1000 V, SCR IXYS UK Westcode T9G0121203DH vs N600CH10
ST1230C12K0 Silicon Controlled Rectifier, 3200A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, KPUK-2 Vishay Semiconductors T9G0121203DH vs ST1230C12K0
N600CH10 Silicon Controlled Rectifier, 2826A I(T)RMS, 600000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element IXYS Corporation T9G0121203DH vs N600CH10
ST1200C10K0 Silicon Controlled Rectifier, 3080A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element International Rectifier T9G0121203DH vs ST1200C10K0
N510CH12 Silicon Controlled Rectifier, 2433.5 A, 1200 V, SCR IXYS UK Westcode T9G0121203DH vs N510CH12
N490CH12 Silicon Controlled Rectifier, 2307.9A I(T)RMS, 495000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element IXYS Corporation T9G0121203DH vs N490CH12
ST1230C10K0PBF Silicon Controlled Rectifier, 2310A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element International Rectifier T9G0121203DH vs ST1230C10K0PBF
C451PB Silicon Controlled Rectifier, 2355A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, T9G, 3 PIN Powerex Power Semiconductors T9G0121203DH vs C451PB
S52K12A Silicon Controlled Rectifier, 2510A I(T)RMS, 1600000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element International Rectifier T9G0121203DH vs S52K12A
S52K8A Silicon Controlled Rectifier, 2700A I(T)RMS, 1720000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element International Rectifier T9G0121203DH vs S52K8A

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