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Overview of TK110A10PL,S4X(S by Toshiba America Electronic Components
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for TK110A10PL,S4X(S by Toshiba America Electronic Components
Part # | Manufacturer | Description | Stock | Price | Buy | ||
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DISTI #
72AK4433
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Newark | Mosfet, N-Ch, 100V, 41A, To-220Sis, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:41A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes |Toshiba TK110A10PL, S4X(S RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
|
$0.5690 / $1.2900 | Buy Now | |
DISTI #
TK110A10PL,S4X(S
|
EBV Elektronik | Transistor MOSFET N-CH 100V 41A 3-Pin TO-220SIS Tube (Alt: TK110A10PL,S4X(S) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 19 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
CAD Models for TK110A10PL,S4X(S by Toshiba America Electronic Components
Part Data Attributes for TK110A10PL,S4X(S by Toshiba America Electronic Components
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Part Life Cycle Code
|
Active
|
Ihs Manufacturer
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TOSHIBA CORP
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Package Description
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TO-220SIS, 3 PIN
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Reach Compliance Code
|
unknown
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ECCN Code
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EAR99
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Avalanche Energy Rating (Eas)
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35 mJ
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Case Connection
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ISOLATED
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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100 V
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Drain Current-Max (ID)
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41 A
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Drain-source On Resistance-Max
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0.0108 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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Feedback Cap-Max (Crss)
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22 pF
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JEDEC-95 Code
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TO-220AB
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JESD-30 Code
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R-PSFM-T3
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Number of Elements
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1
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Number of Terminals
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3
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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175 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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FLANGE MOUNT
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
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36 W
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Pulsed Drain Current-Max (IDM)
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180 A
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Surface Mount
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NO
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Terminal Form
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THROUGH-HOLE
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Terminal Position
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SINGLE
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Transistor Application
|
SWITCHING
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Transistor Element Material
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SILICON
|