Part Details for TK110N65Z,S1F(S by Toshiba America Electronic Components
Overview of TK110N65Z,S1F(S by Toshiba America Electronic Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for TK110N65Z,S1F(S
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
72AK4435
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Newark | Mosfet, N-Ch, 650V, 24A, To-247, Channel Type:N Channel, Drain Source Voltage Vds:650V, Continuous Drain Current Id:24A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Toshiba TK110N65Z, S1F(S Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 330 |
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$2.8600 / $5.2600 | Buy Now |
DISTI #
TK110N65Z,S1F(S
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EBV Elektronik | (Alt: TK110N65Z,S1F(S) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 23 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for TK110N65Z,S1F(S
TK110N65Z,S1F(S CAD Models
TK110N65Z,S1F(S Part Data Attributes
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TK110N65Z,S1F(S
Toshiba America Electronic Components
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Datasheet
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TK110N65Z,S1F(S
Toshiba America Electronic Components
Power Field-Effect Transistor, 24A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
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Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | SC-65, 3 PIN | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 258 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 24 A | |
Drain-source On Resistance-Max | 0.11 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 1.9 pF | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 190 W | |
Pulsed Drain Current-Max (IDM) | 96 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |