Part Details for TK110N65Z,S1F(S by Toshiba America Electronic Components
Overview of TK110N65Z,S1F(S by Toshiba America Electronic Components
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
TK110N65Z | Toshiba Electronic Devices & Storage Corporation | MOSFET, N-ch, 650 V, 24 A, 0.11 Ohm@10V, TO-247 | |
74AC11086D | Texas Instruments | Quadruple 2-Input Exclusive-OR Gates 16-SOIC -40 to 85 | |
74AC11244DW | Texas Instruments | Octal Buffers/Drivers 24-SOIC -40 to 85 |
Price & Stock for TK110N65Z,S1F(S
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
72AK4435
|
Newark | Mosfet, N-Ch, 650V, 24A, To-247, Channel Type:N Channel, Drain Source Voltage Vds:650V, Continuous Drain Current Id:24A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Toshiba TK110N65Z, S1F(S RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 320 |
|
$2.9000 / $5.3200 | Buy Now |
DISTI #
84342456
|
Verical | TK110N65Z,S1F(S Min Qty: 25 Package Multiple: 1 Date Code: 2401 | Americas - 60 |
|
$2.8854 | Buy Now |
DISTI #
75702760
|
Verical | TK110N65Z,S1F(S Min Qty: 7 Package Multiple: 1 | Americas - 30 |
|
$3.4875 / $5.0625 | Buy Now |
|
Quest Components | 48 |
|
$4.1220 / $6.1830 | Buy Now | |
DISTI #
C1S751201959643
|
Chip1Stop | MOSFET RoHS: Compliant Container: Tube | 30 |
|
$2.7900 / $4.0500 | Buy Now |
DISTI #
TK110N65Z,S1F(S
|
EBV Elektronik | (Alt: TK110N65Z,S1F(S) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 23 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for TK110N65Z,S1F(S
TK110N65Z,S1F(S CAD Models
TK110N65Z,S1F(S Part Data Attributes
|
TK110N65Z,S1F(S
Toshiba America Electronic Components
Buy Now
Datasheet
|
Compare Parts:
TK110N65Z,S1F(S
Toshiba America Electronic Components
Power Field-Effect Transistor, 24A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
|
Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | SC-65, 3 PIN | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 258 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 24 A | |
Drain-source On Resistance-Max | 0.11 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 1.9 pF | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 190 W | |
Pulsed Drain Current-Max (IDM) | 96 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |