-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for TK110Z65Z by Toshiba America Electronic Components
Overview of TK110Z65Z by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| TK110Z65Z | Toshiba Electronic Devices & Storage Corporation | MOSFET, N-ch, 650 V, 24 A, 0.11 Ohm@10V, TO-247-4L |
Price & Stock for TK110Z65Z
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
TK110Z65Z,S1F
|
Avnet Americas | Transistor MOSFET N-Channel 650V 24A 4-Pin TO-247 - Rail/Tube (Alt: TK110Z65Z,S1F) RoHS: Compliant Min Qty: 25 Package Multiple: 25 Lead time: 20 Weeks, 0 Days Container: Tube | 0 |
|
$2.9146 / $3.4838 | Buy Now |
Part Details for TK110Z65Z
TK110Z65Z CAD Models
TK110Z65Z Part Data Attributes
|
|
TK110Z65Z
Toshiba America Electronic Components
Buy Now
Datasheet
|
Compare Parts:
TK110Z65Z
Toshiba America Electronic Components
Power Field-Effect Transistor
|
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Toshiba | |
| Avalanche Energy Rating (Eas) | 258 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 24 A | |
| Drain-source On Resistance-Max | 0.11 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 1.9 pF | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 190 W | |
| Pulsed Drain Current-Max (IDM) | 96 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |