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Transistors / Power Field-Effect Transistors / TK12A60W
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TK12A60W by: Toshiba America Electronic Components

TRANSISTOR POWER, FET, FET General Purpose Power

Part Details for TK12A60W by Toshiba America Electronic Components

Overview of TK12A60W by Toshiba America Electronic Components

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Part Details for TK12A60W

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TK12A60W Part Data Attributes

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TK12A60W Toshiba America Electronic Components
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TK12A60W Toshiba America Electronic Components TRANSISTOR POWER, FET, FET General Purpose Power
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Toshiba
Avalanche Energy Rating (Eas) 180 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 11.5 A
Drain-source On Resistance-Max 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 35 W
Pulsed Drain Current-Max (IDM) 46 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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