Part Details for TK155E65Z,S1X(S by Toshiba America Electronic Components
Overview of TK155E65Z,S1X(S by Toshiba America Electronic Components
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for TK155E65Z,S1X(S
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
47AK7049
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Newark | Mosfet, N-Ch, 650V, 18A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:650V, Continuous Drain Current Id:18A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Toshiba TK155E65Z, S1X(S Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 100 |
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$2.0000 / $3.6700 | Buy Now |
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DISTI #
70803445
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Verical | MOSFETs Silicon N-Channel MOS Min Qty: 34 Package Multiple: 1 Date Code: 2101 | Americas - 100 |
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$2.0924 / $2.2517 | Buy Now |
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DISTI #
72488167
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Verical | MOSFETs Silicon N-Channel MOS Min Qty: 8 Package Multiple: 1 | Americas - 50 |
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$2.1750 / $4.2000 | Buy Now |
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Quest Components | 80 |
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$2.6420 / $3.9630 | Buy Now | |
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DISTI #
C1S751201959625
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Chip1Stop | MOSFET RoHS: Compliant Container: Tube | 50 |
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$1.7400 / $3.3600 | Buy Now |
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DISTI #
4035792
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element14 Asia-Pacific | MOSFET, N-CH, 650V, 18A, TO-220 RoHS: Compliant Min Qty: 1 Container: Each | 50 |
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$2.0265 / $3.3208 | Buy Now |
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DISTI #
4035792
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Farnell | MOSFET, N-CH, 650V, 18A, TO-220 RoHS: Compliant Min Qty: 1 Lead time: 23 Weeks, 1 Days Container: Each | 50 |
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$1.9542 / $3.6078 | Buy Now |
Part Details for TK155E65Z,S1X(S
TK155E65Z,S1X(S CAD Models
TK155E65Z,S1X(S Part Data Attributes:
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TK155E65Z,S1X(S
Toshiba America Electronic Components
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Datasheet
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TK155E65Z,S1X(S
Toshiba America Electronic Components
Power Field-Effect Transistor, 18A I(D), 650V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | TO-220, 3 PIN | |
| Reach Compliance Code | unknown | |
| Avalanche Energy Rating (Eas) | 225 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.155 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 1.6 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |