Datasheets
TK16A60W,S5VX(J by: Toshiba America Electronic Components

Power Field-Effect Transistor, 15.8A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Details for TK16A60W,S5VX(J by Toshiba America Electronic Components

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Part Details for TK16A60W,S5VX(J

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TK16A60W,S5VX(J Part Data Attributes

TK16A60W,S5VX(J Toshiba America Electronic Components
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TK16A60W,S5VX(J Toshiba America Electronic Components Power Field-Effect Transistor, 15.8A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description SC-67, TO-220SIS, 3 PIN
Reach Compliance Code unknown
Samacsys Manufacturer Toshiba
Avalanche Energy Rating (Eas) 231 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 15.8 A
Drain-source On Resistance-Max 0.19 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 4 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 40 W
Pulsed Drain Current-Max (IDM) 63.2 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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