Datasheets
TK16A60W,S4VX by: Toshiba America Electronic Components

Power MOSFET - Nch 500V<VDSS≤700V

Part Details for TK16A60W,S4VX by Toshiba America Electronic Components

Overview of TK16A60W,S4VX by Toshiba America Electronic Components

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for TK16A60W,S4VX

Part # Distributor Description Stock Price Buy
DISTI # TK16A60WS4VX-ND
DigiKey MOSFET N-CH 600V 15.8A TO220SIS Min Qty: 1 Lead time: 32 Weeks Container: Tube 30
In Stock
  • 1 $3.5700
  • 10 $2.3330
  • 100 $1.6313
  • 500 $1.3308
  • 1,000 $1.2341
  • 2,000 $1.1975
$1.1975 / $3.5700 Buy Now
DISTI # TK16A60W,S4VX
Avnet Americas Trans MOSFET N 600V 15.8A 3-Pin TO-220SIS Tube - Rail/Tube (Alt: TK16A60W,S4VX) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 32 Weeks, 0 Days Container: Tube 0
  • 50 $1.4657
  • 100 $1.4274
  • 200 $1.3604
  • 300 $1.3220
  • 400 $1.2933
  • 500 $1.2550
  • 5,000 $1.2262
$1.2262 / $1.4657 Buy Now
DISTI # 757-TK16A60WS4VX
Mouser Electronics MOSFETs N-Ch 600V 15.8A 40W DTMOSIV 1350pF 38nC RoHS: Compliant 203
  • 1 $3.0300
  • 10 $2.3200
  • 25 $2.1800
  • 50 $1.9700
  • 100 $1.6700
  • 250 $1.6200
  • 500 $1.3300
  • 1,000 $1.1900
$1.1900 / $3.0300 Buy Now

Part Details for TK16A60W,S4VX

TK16A60W,S4VX Part Data Attributes

TK16A60W,S4VX Toshiba America Electronic Components
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TK16A60W,S4VX Toshiba America Electronic Components Power MOSFET - Nch 500V<VDSS≤700V
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Toshiba
Avalanche Energy Rating (Eas) 231 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 15.8 A
Drain-source On Resistance-Max 0.19 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 4 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 40 W
Pulsed Drain Current-Max (IDM) 63.2 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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