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Power Field-Effect Transistor, 15.8A I(D), 600V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
TK16A60W5,S4VX(M
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EBV Elektronik | Trans MOSFET N-CH 600V 15.8A 3-Pin TO-220SIS (Alt: TK16A60W5,S4VX(M) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 3 Weeks, 2 Days | EBV - 0 |
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TK16A60W5,S4VX(M
Toshiba America Electronic Components
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TK16A60W5,S4VX(M
Toshiba America Electronic Components
Power Field-Effect Transistor, 15.8A I(D), 600V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | SC-67, TO-220SIS, 3 PIN | |
Reach Compliance Code | unknown | |
Samacsys Manufacturer | Toshiba | |
Avalanche Energy Rating (Eas) | 231 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 15.8 A | |
Drain-source On Resistance-Max | 0.23 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 4 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 40 W | |
Pulsed Drain Current-Max (IDM) | 63.2 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |