Part Details for TK190E65Z,S1X(S by Toshiba America Electronic Components
Overview of TK190E65Z,S1X(S by Toshiba America Electronic Components
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
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TK190E65Z | Toshiba Electronic Devices & Storage Corporation | N-ch MOSFET, 650 V, 0.19 Ω@10V, TO-220, DTMOS |
Price & Stock for TK190E65Z,S1X(S
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
47AK7050
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Newark | Mosfet, N-Ch, 650V, 15A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:650V, Continuous Drain Current Id:15A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Toshiba TK190E65Z, S1X(S RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 20 |
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$1.7700 / $3.2500 | Buy Now |
DISTI #
71293825
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Verical | MOSFETs Silicon N-Channel MOS Min Qty: 44 Package Multiple: 1 Date Code: 2301 | Americas - 100 |
|
$1.5938 / $1.7151 | Buy Now |
DISTI #
71329928
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Verical | MOSFETs Silicon N-Channel MOS Min Qty: 9 Package Multiple: 1 | Americas - 50 |
|
$2.0125 / $3.8875 | Buy Now |
|
Quest Components | 80 |
|
$2.2760 / $3.4140 | Buy Now | |
DISTI #
C1S751201959652
|
Chip1Stop | MOSFET RoHS: Compliant Container: Tube | 50 |
|
$1.6100 / $3.1100 | Buy Now |
Part Details for TK190E65Z,S1X(S
TK190E65Z,S1X(S CAD Models
TK190E65Z,S1X(S Part Data Attributes
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TK190E65Z,S1X(S
Toshiba America Electronic Components
Buy Now
Datasheet
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TK190E65Z,S1X(S
Toshiba America Electronic Components
Power Field-Effect Transistor, 15A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | TO-220, 3 PIN | |
Reach Compliance Code | unknown | |
Avalanche Energy Rating (Eas) | 165 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 15 A | |
Drain-source On Resistance-Max | 0.19 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 1.5 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 130 W | |
Pulsed Drain Current-Max (IDM) | 60 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |