Part Details for TK33S10N1L,LXHQ by Toshiba America Electronic Components
Overview of TK33S10N1L,LXHQ by Toshiba America Electronic Components
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Industrial Automation
Electronic Manufacturing
Price & Stock for TK33S10N1L,LXHQ
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
264-TK33S10N1LLXHQCT-ND
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DigiKey | MOSFET N-CH 100V 33A DPAK Min Qty: 1 Lead time: 32 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
3696 In Stock |
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$0.4750 / $1.8000 | Buy Now |
DISTI #
TK33S10N1L,LXHQ
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Avnet Americas | MOSFET N-Channel Enhancement Mode 100V 3-Pin DPAK+ - Tape and Reel (Alt: TK33S10N1L,LXHQ) RoHS: Not Compliant Min Qty: 2000 Package Multiple: 2000 Container: Reel | 0 |
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RFQ | |
DISTI #
757-TK33S10N1LLXHQ
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Mouser Electronics | MOSFETs PD=40W F=1MHZ AEC-Q101 RoHS: Compliant | 3479 |
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$0.5040 / $1.3600 | Buy Now |
Part Details for TK33S10N1L,LXHQ
TK33S10N1L,LXHQ CAD Models
TK33S10N1L,LXHQ Part Data Attributes
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TK33S10N1L,LXHQ
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
TK33S10N1L,LXHQ
Toshiba America Electronic Components
Power Field-Effect Transistor, 33A I(D), 100V, 0.0162ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | DPAK-3/2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Toshiba | |
Avalanche Energy Rating (Eas) | 101 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 33 A | |
Drain-source On Resistance-Max | 0.0162 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 145 pF | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 99 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |