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Transistors / Power Field-Effect Transistors / TK33S10N1Z,LQ
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TK33S10N1Z,LQ by: Toshiba America Electronic Components

MOSFET N-CH 100V 33A DPAK

Part Details for TK33S10N1Z,LQ by Toshiba America Electronic Components

Overview of TK33S10N1Z,LQ by Toshiba America Electronic Components

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Applications Education and Research Industrial Automation Electronic Manufacturing

Price & Stock for TK33S10N1Z,LQ

Part # Distributor Description Stock Price Buy
DISTI # TK33S10N1ZLQCT-ND
DigiKey MOSFET N-CH 100V 33A DPAK Min Qty: 1 Lead time: 32 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 5567
In Stock
  • 1 $2.2000
  • 10 $1.4090
  • 100 $0.9586
  • 500 $0.7655
  • 1,000 $0.7033
  • 2,000 $0.6510
  • 4,000 $0.6262
$0.6262 / $2.2000 Buy Now
DISTI # TK33S10N1Z,LQ
Avnet Americas Trans MOSFET N-CH 100V 33A 3-Pin DPAK - Tape and Reel (Alt: TK33S10N1Z,LQ) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 32 Weeks, 0 Days Container: Reel 0
  • 2,000 $0.7665
  • 4,000 $0.7465
  • 8,000 $0.7114
  • 12,000 $0.6914
  • 16,000 $0.6764
  • 20,000 $0.6563
  • 200,000 $0.6413
$0.6413 / $0.7665 Buy Now
DISTI # 757-TK33S10N1ZLQ
Mouser Electronics MOSFETs UMOSVIII 100V 10m max(VGS=10V) DPAK RoHS: Compliant 1851
  • 1 $1.4500
  • 10 $1.2100
  • 25 $1.1200
  • 100 $0.9220
  • 250 $0.9020
  • 500 $0.7580
  • 1,000 $0.6880
  • 2,000 $0.6520
  • 4,000 $0.6260
$0.6260 / $1.4500 Buy Now
DISTI # C1S751201083384
Chip1Stop MOSFET RoHS: Compliant 7393
  • 1 $1.0700
  • 10 $0.7670
  • 25 $0.6869
  • 100 $0.6845
  • 250 $0.6821
  • 500 $0.6797
  • 1,000 $0.6780
$0.6780 / $1.0700 Buy Now

Part Details for TK33S10N1Z,LQ

TK33S10N1Z,LQ CAD Models

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TK33S10N1Z,LQ Part Data Attributes

Parametric Data
TK33S10N1Z,LQ Toshiba America Electronic Components
Buy Now Datasheet
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TK33S10N1Z,LQ Toshiba America Electronic Components MOSFET N-CH 100V 33A DPAK
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description DPAK-3/2
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 53 Weeks, 1 Day
Samacsys Manufacturer Toshiba
Avalanche Energy Rating (Eas) 66.5 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 33 A
Drain-source On Resistance-Max 0.0097 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 140 pF
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 99 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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