TK33S10N1Z,LXHQ
Toshiba America Electronic Components
Description: Power Field-Effect Transistor, 33A I(D), 100V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Overview of TK33S10N1Z,LXHQ by Toshiba America Electronic Components

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 3 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Available )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Education and Research Industrial Automation Electronic Manufacturing

Price & Stock for TK33S10N1Z,LXHQ by Toshiba America Electronic Components

Part # Manufacturer Description Stock Price Buy
DISTI # 264-TK33S10N1ZLXHQCT-ND
DigiKey MOSFET N-CH 100V 33A DPAK Min Qty: 1 Lead time: 32 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 3974
In Stock
  • 1 $1.9000
  • 10 $1.2110
  • 100 $0.8177
  • 500 $0.6487
  • 1,000 $0.5943
  • 2,000 $0.5485
  • 4,000 $0.5125
$0.5125 / $1.9000 Buy Now
DISTI # TK33S10N1Z,LXHQ
Avnet Americas Trans MOSFET N-CH 100V 33A 3-Pin DPAK - Tape and Reel (Alt: TK33S10N1Z,LXHQ) RoHS: Not Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 32 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # 757-TK33S10N1Z,LXHQ
Mouser Electronics MOSFETs 125W 1MHz Automotive, AEC-Q101 RoHS: Compliant 26812
  • 1 $1.3300
  • 10 $1.0900
  • 25 $0.9840
  • 100 $0.8220
  • 250 $0.7720
  • 500 $0.6530
  • 1,000 $0.5830
  • 2,000 $0.5380
  • 4,000 $0.5120
$0.5120 / $1.3300 Buy Now

CAD Models for TK33S10N1Z,LXHQ by Toshiba America Electronic Components
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Part Data Attributes for TK33S10N1Z,LXHQ by Toshiba America Electronic Components

TK33S10N1Z,LXHQ
Toshiba America Electronic Components
-
-
Part Life Cycle Code
Active
Ihs Manufacturer
TOSHIBA CORP
Package Description
DPAK-3/2
Reach Compliance Code
unknown
ECCN Code
EAR99
Samacsys Manufacturer
Toshiba
Avalanche Energy Rating (Eas)
66.5 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
33 A
Drain-source On Resistance-Max
0.0097 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
140 pF
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
125 W
Pulsed Drain Current-Max (IDM)
99 A
Reference Standard
AEC-Q101
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. TK33S10N1Z,LXHQ
    Toshiba America Electronic Components
    Power Field-Effect Transistor, 33A I(D), 100V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    VS

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