Part Details for TK33S10N1Z by Toshiba America Electronic Components
Overview of TK33S10N1Z by Toshiba America Electronic Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for TK33S10N1Z
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
TK33S10N1Z,LQ
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Avnet Americas | Trans MOSFET N-CH 100V 33A 3-Pin DPAK - Tape and Reel (Alt: TK33S10N1Z,LQ) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 53 Weeks, 1 Days Container: Reel | 0 |
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$0.7265 / $0.9268 | Buy Now |
DISTI #
TK33S10N1Z,LXHQ
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Avnet Americas | Trans MOSFET N-CH 100V 33A 3-Pin DPAK - Tape and Reel (Alt: TK33S10N1Z,LXHQ) RoHS: Not Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 32 Weeks, 0 Days Container: Reel | 0 |
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RFQ |
Part Details for TK33S10N1Z
TK33S10N1Z CAD Models
TK33S10N1Z Part Data Attributes
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TK33S10N1Z
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
TK33S10N1Z
Toshiba America Electronic Components
Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 60V<VDSS≤150V
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Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 32 Weeks | |
Samacsys Manufacturer | Toshiba | |
Avalanche Energy Rating (Eas) | 66.5 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 33 A | |
Drain-source On Resistance-Max | 0.0097 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 140 pF | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 99 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for TK33S10N1Z
This table gives cross-reference parts and alternative options found for TK33S10N1Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TK33S10N1Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
TK34E10N1 | Nch 60V<VDSS≤150V | Toshiba America Electronic Components | TK33S10N1Z vs TK34E10N1 |