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Part Details for TK380A65Y,S4X by Toshiba America Electronic Components
Overview of TK380A65Y,S4X by Toshiba America Electronic Components
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for TK380A65Y,S4X
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
264-TK380A65YS4X-ND
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DigiKey | X35 PB-F POWER MOSFET TRANSISTOR Min Qty: 1 Lead time: 52 Weeks Container: Tube |
87 In Stock |
|
$0.7375 / $2.4700 | Buy Now |
|
DISTI #
TK380A65Y,S4X
|
Avnet Americas | MOSFET N-Channel Enhancement Mode 650V 3-Pin TO-220SIS - Rail/Tube (Alt: TK380A65Y,S4X) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 20 Weeks, 0 Days Container: Tube | 0 |
|
$0.7552 / $0.9027 | Buy Now |
|
DISTI #
757-TK380A65YS4X
|
Mouser Electronics | MOSFETs TO-220SIS PD=30W 1MHz PWR MOSFET TRNS RoHS: Compliant | 314 |
|
$0.7370 / $2.0300 | Buy Now |
Part Details for TK380A65Y,S4X
TK380A65Y,S4X CAD Models
TK380A65Y,S4X Part Data Attributes
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TK380A65Y,S4X
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
TK380A65Y,S4X
Toshiba America Electronic Components
Power Field-Effect Transistor
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 53 Weeks, 1 Day | |
| Samacsys Manufacturer | Toshiba | |
| Avalanche Energy Rating (Eas) | 96 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 9.7 A | |
| Drain-source On Resistance-Max | 0.38 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 2.5 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 30 W | |
| Pulsed Drain Current-Max (IDM) | 38.8 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |