Part Details for TK380P65Y,RQ by Toshiba America Electronic Components
Overview of TK380P65Y,RQ by Toshiba America Electronic Components
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for TK380P65Y,RQ
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
TK380P65YRQCT-ND
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DigiKey | MOSFET N-CHANNEL 650V 9.7A DPAK Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2036 In Stock |
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$0.6963 / $2.3700 | Buy Now |
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DISTI #
TK380P65Y,RQ
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Avnet Americas | Power MOSFET N-Channel 650V 9.7A 3-Pin DPAK T/R - Tape and Reel (Alt: TK380P65Y,RQ) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$0.7130 / $0.8522 | Buy Now |
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DISTI #
757-TK380P65YRQ
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Mouser Electronics | MOSFETs N-Ch DTMOSV 650V 80W 590pF 9.7A RoHS: Compliant | 36 |
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$0.6960 / $1.6700 | Buy Now |
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DISTI #
C1S751201178318
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Chip1Stop | MOSFET RoHS: Compliant | 266 |
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$0.5930 | Buy Now |
Part Details for TK380P65Y,RQ
TK380P65Y,RQ CAD Models
TK380P65Y,RQ Part Data Attributes
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TK380P65Y,RQ
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
TK380P65Y,RQ
Toshiba America Electronic Components
Power Field-Effect Transistor, 9.7A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | DPAK-3/2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 53 Weeks, 1 Day | |
| Samacsys Manufacturer | Toshiba | |
| Avalanche Energy Rating (Eas) | 96 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 9.7 A | |
| Drain-source On Resistance-Max | 0.38 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 2.5 pF | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 80 W | |
| Pulsed Drain Current-Max (IDM) | 38.8 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |