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Transistors / Power Field-Effect Transistors / TK39N60W
Datasheets
TK39N60W by: Toshiba America Electronic Components

TRANSISTOR POWER, FET, FET General Purpose Power

Part Details for TK39N60W by Toshiba America Electronic Components

Overview of TK39N60W by Toshiba America Electronic Components

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for TK39N60W

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 1 10
  • 1 $8.9600
  • 4 $5.8240
$5.8240 / $8.9600 Buy Now

Part Details for TK39N60W

TK39N60W CAD Models

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TK39N60W Part Data Attributes

Parametric Data
TK39N60W Toshiba America Electronic Components
Buy Now Datasheet
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TK39N60W Toshiba America Electronic Components TRANSISTOR POWER, FET, FET General Purpose Power
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Toshiba
Avalanche Energy Rating (Eas) 608 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 38.8 A
Drain-source On Resistance-Max 0.065 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 270 W
Pulsed Drain Current-Max (IDM) 155 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for TK39N60W

This table gives cross-reference parts and alternative options found for TK39N60W. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TK39N60W, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IXKP35N60C5 Littelfuse Inc Check for Price Power Field-Effect Transistor, 35A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN TK39N60W vs IXKP35N60C5
TK39J60W Toshiba America Electronic Components Check for Price TRANSISTOR POWER, FET, FET General Purpose Power TK39N60W vs TK39J60W
IPW65R080CFD Infineon Technologies AG Check for Price Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 TK39N60W vs IPW65R080CFD
NTHL082N65S3F onsemi $6.9653 Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 40 A, 82 mΩ, TO-247, TO-247-3, 450-TUBE TK39N60W vs NTHL082N65S3F
NVHL082N65S3F onsemi $6.2969 Single N-Channel Power MOSFET SUPERFET® III, FRFET®, 650 V , 40 A, 82 mΩ, TO-247, TO-247-3LD, 450-TUBE, Automotive Qualified TK39N60W vs NVHL082N65S3F
IPW65R080CFDFKSA2 Infineon Technologies AG $9.4432 Power Field-Effect Transistor, TK39N60W vs IPW65R080CFDFKSA2
IPW65R080CFDAFKSA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 TK39N60W vs IPW65R080CFDAFKSA1
NVB072N65S3 onsemi $5.4933 Single N-Channel Power MOSFET SUPERFET® III, Easy Drive, 650 V , 44 A, 72 mΩ, D2PAK, D2PAK-3 / TO-263-2, 800-REEL, Automotive Qualified TK39N60W vs NVB072N65S3
IPB60R099C6ATMA1 Infineon Technologies AG $4.0688 Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN TK39N60W vs IPB60R099C6ATMA1
APT38N60BC6 Microchip Technology Inc $6.5472 Power Field-Effect Transistor, 38A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 TK39N60W vs APT38N60BC6

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