Datasheets
TN2435N8-G by:

0.365A, 350V, 6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA

Part Details for TN2435N8-G by Microchip Technology Inc

Overview of TN2435N8-G by Microchip Technology Inc

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Price & Stock for TN2435N8-G

Part # Distributor Description Stock Price Buy
DISTI # 53Y4247
Newark Mosfet, N-Channel Enhancement-Mode, 350V, 6 Ohm 3 Sot-89 T/R Rohs Compliant: Yes |Microchip TN2435N8-G Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 100 $1.3100
$1.3100 Buy Now
DISTI # TN2435N8-GCT-ND
DigiKey MOSFET N-CH 350V 365MA TO243AA Min Qty: 1 Lead time: 6 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 6758
In Stock
  • 1 $1.6700
  • 25 $1.3800
  • 100 $1.2700
  • 2,000 $1.2700
$1.2700 / $1.6700 Buy Now
DISTI # TN2435N8-G
Avnet Americas Trans MOSFET N-CH 350V 0.365A 3-Pin SOT-89 T/R - Tape and Reel (Alt: TN2435N8-G) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Container: Reel 0
  • 1 $1.6700
  • 25 $1.3800
  • 100 $1.2700
$1.2700 / $1.6700 Buy Now
DISTI # 689-TN2435N8-G
Mouser Electronics MOSFET 350V 10Ohm RoHS: Compliant 7673
  • 1 $1.6700
  • 10 $1.6600
  • 25 $1.3700
  • 100 $1.2500
  • 250 $1.2300
  • 500 $1.2200
  • 2,000 $1.2200
  • 4,000 $1.2100
$1.2100 / $1.6700 Buy Now
DISTI # V72:2272_06515650
Arrow Electronics Trans MOSFET N-CH Si 350V 0.365A 4-Pin(3+Tab) SOT-89 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 6 Weeks Date Code: 2323 Container: Cut Strips Americas - 1508
  • 1 $1.6482
  • 10 $1.6225
  • 25 $1.3358
  • 100 $1.2042
  • 250 $1.1920
  • 500 $1.1752
  • 1,000 $1.1584
$1.1584 / $1.6482 Buy Now
DISTI # TN2435N8-G
Microchip Technology Inc MOSFET, N-CHANNEL ENHANCEMENT-MODE, 350V, 6 Ohm, Projected EOL: 2048-10-03 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $1.6700
  • 25 $1.3800
  • 100 $1.2700
  • 1,000 $1.0500
  • 5,000 $0.9800
$0.9800 / $1.6700 Buy Now
DISTI # 70452737
RS MOSFET, N-CHANNEL ENHANCEMENT-MODE, 350V, 6 Ohm3 SOT-89 T/R | Microchip Technology Inc. TN2435N8-G RoHS: Not Compliant Min Qty: 2000 Package Multiple: 1 Lead time: 52 Weeks, 0 Days Container: Bulk 0
  • 2,000 $1.6100
  • 20,000 $1.5300
  • 100,000 $1.4500
  • 200,000 $1.3700
$1.3700 / $1.6100 RFQ
Future Electronics MOSFET 350V 10Ohm RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel 0
Reel
  • 2,000 $1.1400
  • 4,000 $1.1100
$1.1100 / $1.1400 Buy Now
Onlinecomponents.com Trans MOSFET N-CH Si 350V 0.365A 4-Pin(3+Tab) SOT-89 T/R RoHS: Compliant 4486 In Stock
8000 Factory Stock
  • 250 $1.2400
  • 500 $1.2400
  • 2,000 $1.2300
  • 4,000 $1.2300
  • 6,000 $1.2200
  • 8,000 $1.2100
  • 10,000 $1.2100
  • 16,000 $1.2000
$1.2000 / $1.2400 Buy Now
DISTI # 65091991
Verical Trans MOSFET N-CH Si 350V 0.365A 4-Pin(3+Tab) SOT-89 T/R RoHS: Compliant Min Qty: 250 Package Multiple: 250 Date Code: 2239 Americas - 4250
  • 250 $1.6447
$1.6447 Buy Now
DISTI # 69169346
Verical Trans MOSFET N-CH Si 350V 0.365A 4-Pin(3+Tab) SOT-89 T/R RoHS: Compliant Min Qty: 7 Package Multiple: 1 Date Code: 2323 Americas - 1508
  • 7 $1.6482
  • 10 $1.6225
  • 25 $1.3358
  • 100 $1.2042
  • 250 $1.1920
  • 500 $1.1752
  • 1,000 $1.1584
$1.1584 / $1.6482 Buy Now
DISTI # TN2435N8-G
Avnet Americas Trans MOSFET N-CH 350V 0.365A 3-Pin SOT-89 T/R - Tape and Reel (Alt: TN2435N8-G) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Container: Reel 0
  • 1 $1.6700
  • 25 $1.3800
  • 100 $1.2700
$1.2700 / $1.6700 Buy Now
DISTI # TN2435N8-G
TME Transistor: N-MOSFET, unipolar, 350V, 1A, 1.6W, SOT89-3 Min Qty: 1 0
  • 1 $1.4800
  • 3 $1.3300
  • 10 $1.1200
  • 100 $1.0300
$1.0300 / $1.4800 RFQ
Ameya Holding Limited   10000
RFQ
NAC MOSFET, N-CHANNEL ENHANCEMENT-MODE, 350V, 6 Ohm - Package: 3 SOT-89 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 2000 4000
  • 1 $0.9700
  • 100 $0.8800
  • 500 $0.8100
  • 1,000 $0.7900
$0.7900 / $0.9700 Buy Now
DISTI # TN2435N8-G
Avnet Silica Trans MOSFET N-CH 350V 0.365A 3-Pin SOT-89 T/R (Alt: TN2435N8-G) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 1 Weeks, 1 Days Silica - 0
Buy Now
Chip1Cloud N-Channel Enhancement-Mode Vertical DMOS FET | MOSFET N-CH 350V 365MA SOT89-3 8100
RFQ
DISTI # TN2435N8-G
EBV Elektronik Trans MOSFET N-CH 350V 0.365A 3-Pin SOT-89 T/R (Alt: TN2435N8-G) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 1 Weeks, 0 Days EBV - 0
Buy Now
LCSC 350V 365mA 6750mA10V 1.6W 2.5V1mA 1PCSNChannel SOT-89-3 MOSFETs ROHS 151
  • 1 $1.1092
  • 10 $0.9534
  • 30 $0.8559
  • 100 $0.7564
  • 500 $0.7090
  • 1,000 $0.6899
$0.6899 / $1.1092 Buy Now
Master Electronics Trans MOSFET N-CH Si 350V 0.365A 4-Pin(3+Tab) SOT-89 T/R RoHS: Compliant 4486 In Stock
8000 Factory Stock
  • 250 $1.2400
  • 500 $1.2400
  • 2,000 $1.2300
  • 4,000 $1.2300
  • 6,000 $1.2200
  • 8,000 $1.2100
  • 10,000 $1.2100
  • 16,000 $1.2000
$1.2000 / $1.2400 Buy Now
Win Source Electronics N-Channel Enhancement-Mode Vertical DMOS FET | MOSFET N-CH 350V 365MA SOT89-3 8600
  • 4 $12.9580
  • 10 $10.6320
  • 15 $10.3000
  • 21 $9.9680
  • 26 $9.6350
  • 35 $8.6390
$8.6390 / $12.9580 Buy Now

Part Details for TN2435N8-G

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TN2435N8-G Part Data Attributes:

TN2435N8-G Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
TN2435N8-G Microchip Technology Inc 0.365A, 350V, 6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description SOT-89, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 7 Weeks
Samacsys Manufacturer Microchip
Additional Feature LOGIC LEVEL COMPATIBLE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 350 V
Drain Current-Max (ID) 0.365 A
Drain-source On Resistance-Max 6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 25 pF
JEDEC-95 Code TO-243AA
JESD-30 Code R-PSSO-F3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.6 W
Pulsed Drain Current-Max (IDM) 1.8 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form FLAT
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 70 ns
Turn-on Time-Max (ton) 40 ns

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