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Part Details for TP2510N8-G by Microchip Technology Inc
Overview of TP2510N8-G by Microchip Technology Inc
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
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Price & Stock for TP2510N8-G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
44AC3372
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Newark | Mosfet, P-Ch, -0.48A, 100V, Sot-89-3, Transistor Polarity:P Channel, Continuous Drain Current Id:-480Ma, Drain Source Voltage Vds:-100V, On Resistance Rds(On):2Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-2.4V, Power Rohs Compliant: Yes |Microchip TP2510N8-G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1922 |
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$1.2000 / $1.6000 | Buy Now |
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DISTI #
53Y4276
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Newark | Mosfet, P-Channel Enhancement-Mode, -100V, 3.5 Ohm 3 Sot-89 T/R Rohs Compliant: Yes |Microchip TP2510N8-G RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.1900 | Buy Now |
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DISTI #
TP2510N8-G
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Avnet Americas | Trans MOSFET P-CH 100V 0.48A 4-Pin(3+Tab) SOT-89 - Tape and Reel (Alt: TP2510N8-G) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 7 Weeks, 0 Days Container: Reel | 0 |
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$1.1500 / $1.5400 | Buy Now |
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DISTI #
TP2510N8-G
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Microchip Technology Inc | MOSFET, P-CHANNEL ENHANCEMENT-MODE, -100V, 3.5 Ohm, SOT-89, Projected EOL: 2034-08-19 RoHS: Compliant Lead time: 7 Weeks, 0 Days Container: Reel |
0 Alternates Available COO: China, Philippines, Taiwan |
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Buy Now | |
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DISTI #
70451501
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RS | MOSFET, P-CHANNEL ENHANCEMENT-MODE, -100V, 3.5 Ohm3 SOT-89 T/R | Microchip Technology Inc. TP2510N8-G RoHS: Not Compliant Min Qty: 2000 Package Multiple: 1 Lead time: 18 Weeks, 0 Days Container: Bulk | 0 |
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$1.2600 / $1.4800 | RFQ |
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DISTI #
TP2510N8-G
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TME | Transistor: P-MOSFET, unipolar, -100V, -1.5A, 1.6W, SOT89-3 Min Qty: 1 | 1340 |
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$0.8500 / $1.3700 | Buy Now |
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NAC | MOSFET, P-CHANNEL ENHANCEMENT-MODE, -100V, 3.5 Ohm - Package: 3 SOT-89 T/R RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 | 0 |
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$0.7200 / $0.8900 | Buy Now |
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DISTI #
TP2510N8-G
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Avnet Silica | Trans MOSFET P-CH 100V 0.48A 4-Pin(3+Tab) SOT-89 (Alt: TP2510N8-G) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 9 Weeks, 0 Days | Silica - 6000 |
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Buy Now | |
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Chip-Germany GmbH | RoHS: Not Compliant | 3 |
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RFQ | |
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DISTI #
TP2510N8-G
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EBV Elektronik | Trans MOSFET P-CH 100V 0.48A 4-Pin(3+Tab) SOT-89 (Alt: TP2510N8-G) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 8 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for TP2510N8-G
TP2510N8-G CAD Models
TP2510N8-G Part Data Attributes
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TP2510N8-G
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
TP2510N8-G
Microchip Technology Inc
0.48A, 100V, 3.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-243AA
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Package Description | GREEN PACKAGE-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 7 Weeks | |
| Samacsys Manufacturer | Microchip | |
| Additional Feature | LOGIC LEVEL COMPATIBLE, LOW THRESHOLD | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 0.48 A | |
| Drain-source On Resistance-Max | 3.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 25 pF | |
| JEDEC-95 Code | TO-243AA | |
| JESD-30 Code | R-PSSO-F3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.6 W | |
| Pulsed Drain Current-Max (IDM) | 2.5 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 35 ns | |
| Turn-on Time-Max (ton) | 25 ns |