TPH1400ANH,L1Q
Toshiba America Electronic Components
Description: Power MOSFET - Nch 60V<VDSS≤150V

Overview of TPH1400ANH,L1Q by Toshiba America Electronic Components

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 1 listing )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Available )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Healthcare

Price & Stock for TPH1400ANH,L1Q by Toshiba America Electronic Components

Part # Manufacturer Description Stock Price Buy
DISTI # TPH1400ANH,L1Q
Avnet Americas Trans MOSFET N 100V 42A 8-Pin SOP - Tape and Reel (Alt: TPH1400ANH,L1Q) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 5,000 $0.6564
  • 10,000 $0.6392
  • 20,000 $0.6092
  • 30,000 $0.5920
  • 40,000 $0.5792
  • 50,000 $0.5620
  • 500,000 $0.5491
$0.5491 / $0.6564 Buy Now

CAD Models for TPH1400ANH,L1Q by Toshiba America Electronic Components
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Part Data Attributes for TPH1400ANH,L1Q by Toshiba America Electronic Components

TPH1400ANH,L1Q
Toshiba America Electronic Components
-
-
Part Life Cycle Code
Active
Ihs Manufacturer
TOSHIBA CORP
Reach Compliance Code
unknown
Samacsys Manufacturer
Toshiba
Avalanche Energy Rating (Eas)
46 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
42 A
Drain-source On Resistance-Max
0.0136 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
50 pF
JESD-30 Code
S-PDSO-F8
Number of Elements
1
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
SQUARE
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
48 W
Pulsed Drain Current-Max (IDM)
91 A
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. TPH1400ANH,L1Q
    Toshiba America Electronic Components
    Power MOSFET - Nch 60V<VDSS≤150V
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