TPH3R203NL,L1Q(M
Toshiba America Electronic Components
Description: Power Field-Effect Transistor, 60A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Overview of TPH3R203NL,L1Q(M by Toshiba America Electronic Components

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 5 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Available Datasheets

Part # Manufacturer Description Datasheet
EVAL-ADN4650EB1Z Analog Devices ADN4650 Evaluation Board
ADN4651BRSZ-RL7 Analog Devices 3.75kVrms LVDS Iso 600Mbps Dua
ADN4692EBRZ-RL7 Analog Devices MLVDS Xcvr,FD,100M Type 1 Rx,E

Price & Stock for TPH3R203NL,L1Q(M by Toshiba America Electronic Components

Part # Manufacturer Description Stock Price Buy
DISTI # 72AK4613
Newark Mosfet, N-Ch, 30V, 84A, Sop Advance, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:84A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.3V Rohs Compliant: Yes |Toshiba TPH3R203NL, L1Q(M RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 4774
  • 1 $0.3070
  • 10 $0.3070
  • 25 $0.3070
  • 50 $0.3070
  • 100 $0.3070
  • 250 $0.3070
  • 500 $0.3070
  • 1,000 $0.3070
$0.3070 Buy Now
DISTI # 71239195
Verical Trans MOSFET N-CH Si 30V 84A 8-Pin SOP Advance T/R RoHS: Compliant Min Qty: 59 Package Multiple: 1 Date Code: 2312 Americas - 4850
  • 59 $0.5375
  • 100 $0.4725
  • 200 $0.4525
  • 500 $0.4275
  • 1,000 $0.4050
$0.4050 / $0.5375 Buy Now
DISTI # TPH3R203NL,L1Q(M
Avnet Asia Trans MOSFET N-CH 30V 47A 8-Pin SOP (Alt: TPH3R203NL,L1Q(M) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 24 Weeks, 0 Days 0
RFQ
DISTI # C1S751200928196
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape 4850
  • 5 $0.6090
  • 10 $0.4890
  • 50 $0.4300
  • 100 $0.3780
  • 200 $0.3620
  • 500 $0.3420
  • 1,000 $0.3240
$0.3240 / $0.6090 Buy Now
DISTI # TPH3R203NL,L1Q(M
EBV Elektronik Trans MOSFET N-CH 30V 47A 8-Pin SOP (Alt: TPH3R203NL,L1Q(M) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 23 Weeks, 0 Days EBV - 0
Buy Now

CAD Models for TPH3R203NL,L1Q(M by Toshiba America Electronic Components
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Part Data Attributes for TPH3R203NL,L1Q(M by Toshiba America Electronic Components

TPH3R203NL,L1Q(M
Toshiba America Electronic Components
-
-
Part Life Cycle Code
Active
Ihs Manufacturer
TOSHIBA CORP
Package Description
SMALL OUTLINE, S-PDSO-F5
Reach Compliance Code
unknown
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
94 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
60 A
Drain-source On Resistance-Max
0.0047 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
S-PDSO-F5
Number of Elements
1
Number of Terminals
5
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
SQUARE
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
200 A
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. TPH3R203NL,L1Q(M
    Toshiba America Electronic Components
    Power Field-Effect Transistor, 60A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    VS

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