Datasheets
TPH4R008NH by: Toshiba America Electronic Components

TRANSISTOR POWER, FET, FET General Purpose Power

Part Details for TPH4R008NH by Toshiba America Electronic Components

Results Overview of TPH4R008NH by Toshiba America Electronic Components

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Applications Energy and Power Systems Renewable Energy

TPH4R008NH Information

TPH4R008NH by Toshiba America Electronic Components is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for TPH4R008NH

Part # Distributor Description Stock Price Buy
Chip-Germany GmbH   RoHS: Not Compliant Date Code: 18+ 20000
RFQ

Part Details for TPH4R008NH

TPH4R008NH CAD Models

TPH4R008NH Part Data Attributes

TPH4R008NH Toshiba America Electronic Components
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TPH4R008NH Toshiba America Electronic Components TRANSISTOR POWER, FET, FET General Purpose Power
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description SMALL OUTLINE, S-PDSO-F5
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Toshiba
Avalanche Energy Rating (Eas) 340 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 60 A
Drain-source On Resistance-Max 0.004 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-F5
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 200 A
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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