Findchips: tph4r50anh,l1q by Toshiba America Electronic Components

Overview of TPH4R50ANH,L1Q by Toshiba America Electronic Components

Distributor Offerings: (4 listings)

Number of FFF Equivalents: (0 crosses)

CAD Models: (Available)

Number of Functional Equivalents: (0 crosses)

Part Data Attributes: (Available)

Reference Designs: (Not Available)

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Part #	Distributor	Description	Stock	Price	Buy
TPH4R50ANH,L1Q DISTI # TPH4R50ANHL1QCT-ND	DigiKey	MOSFET N CH 100V 60A SOP ADV Min Qty: 1 Lead time: 32 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR)	11561 In Stock	1 $2.6000 10 $2.1830 100 $1.7658 500 $1.5696 1,000 $1.3439 2,000 $1.2655 5,000 $1.2512	$1.2512 / $2.6000	Buy Now
TPH4R50ANHL1Q DISTI # TPH4R50ANH,L1Q	Avnet Americas	Trans MOSFET N 100V 93A 8-Pin SOP - Tape and Reel (Alt: TPH4R50ANH,L1Q) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks, 0 Days Container: Reel	0	5,000 $1.5315 10,000 $1.4915 20,000 $1.4214 30,000 $1.3814 40,000 $1.3514 50,000 $1.3113 500,000 $1.2813	$1.2813 / $1.5315	Buy Now
TPH4R50ANH,L1Q DISTI # 757-TPH4R50ANHL1Q	Mouser Electronics	MOSFET U-MOSVIII-H 100V 93A 58nC MOSFET RoHS: Compliant	3976	1 $2.6000 10 $2.1900 25 $2.0600 100 $1.7700 250 $1.6700 500 $1.5700 1,000 $1.2700 5,000 $1.2500	$1.2500 / $2.6000	Buy Now
TPH4R50ANH,L1Q	Chip Stock		10929			RFQ

Part Details for TPH4R50ANH,L1Q

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Show differences only	TPH4R50ANH,L1Q Toshiba America Electronic Components Buy Now Datasheet	Buy Now	Compare Parts: TPH4R50ANH,L1Q Toshiba America Electronic Components Power MOSFET - Nch 60V<VDSS≤150V

Part Life Cycle Code	Active
Ihs Manufacturer	TOSHIBA CORP
Package Description	SOP-8
Reach Compliance Code	unknown
ECCN Code	EAR99
Samacsys Manufacturer	Toshiba
Avalanche Energy Rating (Eas)	274 mJ
Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	100 V
Drain Current-Max (ID)	60 A
Drain-source On Resistance-Max	0.0045 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	63 pF
JESD-30 Code	S-PDSO-F8
Number of Elements	1
Number of Terminals	8
Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C
Package Body Material	PLASTIC/EPOXY
Package Shape	SQUARE
Package Style	SMALL OUTLINE
Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	78 W
Pulsed Drain Current-Max (IDM)	200 A
Surface Mount	YES
Terminal Form	FLAT
Terminal Position	DUAL
Transistor Application	SWITCHING
Transistor Element Material	SILICON