Part Details for TPH4R50ANH1,LQ(M by Toshiba America Electronic Components
Overview of TPH4R50ANH1,LQ(M by Toshiba America Electronic Components
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| EVAL-ADN4650EB1Z | Analog Devices | ADN4650 Evaluation Board | |
| ADN4651BRSZ-RL7 | Analog Devices | 3.75kVrms LVDS Iso 600Mbps Dua | |
| ADN4692EBRZ-RL7 | Analog Devices | MLVDS Xcvr,FD,100M Type 1 Rx,E |
Price & Stock for TPH4R50ANH1,LQ(M
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
09AK8993
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Newark | Mosfet, N-Ch, 100V, 92A, Sop, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:92A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Product Range:- Rohs Compliant: Yes |Toshiba TPH4R50ANH1,LQ(M RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 9710 |
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$0.5830 | Buy Now |
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DISTI #
82783431
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Verical | TPH4R50ANH1,LQ(M Min Qty: 47 Package Multiple: 1 Date Code: 2228 | Americas - 1405 |
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$0.6600 / $0.7375 | Buy Now |
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DISTI #
TPH4R50ANH1,LQ(M
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Avnet Asia | Transistor MOSFET N-CH 100V 60A 8-Pin SOP Advance (Alt: TPH4R50ANH1,LQ(M) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 28 Weeks, 0 Days | 0 |
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RFQ | |
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DISTI #
C1S751201332907
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Chip1Stop | MOSFET RoHS: Compliant Container: Cut Tape | 1405 |
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$0.4820 / $0.5870 | Buy Now |
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DISTI #
TPH4R50ANH1,LQ(M
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EBV Elektronik | (Alt: TPH4R50ANH1,LQ(M) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 23 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for TPH4R50ANH1,LQ(M
TPH4R50ANH1,LQ(M CAD Models
TPH4R50ANH1,LQ(M Part Data Attributes
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TPH4R50ANH1,LQ(M
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
TPH4R50ANH1,LQ(M
Toshiba America Electronic Components
Power Field-Effect Transistor
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 274 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.0045 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 63 pF | |
| JESD-30 Code | S-PDSO-F8 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 78 W | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |