Datasheets
TPS1100DR by: Texas Instruments

Single P-channel Enhancement-Mode MOSFET 8-SOIC

Part Details for TPS1100DR by Texas Instruments

Results Overview of TPS1100DR by Texas Instruments

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Applications Energy and Power Systems Renewable Energy Automotive

TPS1100DR Information

TPS1100DR by Texas Instruments is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for TPS1100DR

Part # Distributor Description Stock Price Buy
Bristol Electronics   2500
RFQ
Rochester Electronics TPS1100 Single P-channel Enhancement-Mode MOSFET RoHS: Compliant Status: Active Min Qty: 1 564
  • 100 $0.9468
  • 500 $0.8521
  • 1,000 $0.7858
  • 10,000 $0.7006
  • 100,000 $0.5870
$0.5870 / $0.9468 Buy Now
LCSC 15V 700m3V0.2A 791mW 1.5V 1 piece P-channel SOIC-8 MOSFETs ROHS 86
  • 1 $0.9871
  • 10 $0.8964
  • 30 $0.8465
  • 100 $0.7921
  • 500 $0.6833
  • 1,000 $0.6712
$0.6712 / $0.9871 Buy Now

Part Details for TPS1100DR

TPS1100DR CAD Models

TPS1100DR Part Data Attributes

TPS1100DR Texas Instruments
Buy Now Datasheet
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TPS1100DR Texas Instruments Single P-channel Enhancement-Mode MOSFET 8-SOIC
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TEXAS INSTRUMENTS INC
Part Package Code SOIC
Package Description SOIC-8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.39.00.01
Samacsys Manufacturer Texas Instruments
Additional Feature LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 15 V
Drain Current-Max (ID) 1.6 A
Drain-source On Resistance-Max 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e4
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 0.791 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for TPS1100DR

This table gives cross-reference parts and alternative options found for TPS1100DR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TPS1100DR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
TPS1100DRG4 Texas Instruments Check for Price 1600mA, 15V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, GREEN, SOIC-8 TPS1100DR vs TPS1100DRG4
Part Number Manufacturer Composite Price Description Compare
STS10PF30L STMicroelectronics Check for Price 10mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8 TPS1100DR vs STS10PF30L
NDS8434AD84Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 7.8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 TPS1100DR vs NDS8434AD84Z
FDS4435 Fairchild Semiconductor Corporation Check for Price -30V P-Channel PowerTrench® MOSFET, 8LD, JEDEC MS-012, .150"NARROW BODY, 2500/TAPE REEL TPS1100DR vs FDS4435
FDS4435AF011 Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 TPS1100DR vs FDS4435AF011
FDR844PD84Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 10A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-8 TPS1100DR vs FDR844PD84Z
NDS9435AF011 Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 TPS1100DR vs NDS9435AF011
FDS6675A_NL Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 TPS1100DR vs FDS6675A_NL
FDS6675A Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 TPS1100DR vs FDS6675A
FDS4435BZ_F085 Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 TPS1100DR vs FDS4435BZ_F085
NDS9435A/D84Z Texas Instruments Check for Price 5300mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET TPS1100DR vs NDS9435A/D84Z

TPS1100DR Related Parts

TPS1100DR Frequently Asked Questions (FAQ)

  • A good PCB layout for the TPS1100DR involves placing the input and output capacitors close to the device, using a solid ground plane, and minimizing the length of the input and output traces. A 4-layer PCB with a dedicated power plane and a solid ground plane is recommended.

  • To ensure stability, it's essential to follow the recommended component values and PCB layout guidelines. Additionally, the output capacitor should be selected based on the specific application requirements, and the input capacitor should be chosen to ensure a stable input voltage.

  • The TPS1100DR can handle input voltages up to 18V, but it's recommended to operate within the specified input voltage range of 2.7V to 15V for optimal performance and reliability.

  • The TPS1100DR is rated for operation up to 125°C, but the device's performance and reliability may degrade at high temperatures. It's essential to consider the thermal design and heat dissipation in the system to ensure reliable operation.

  • The output voltage of the TPS1100DR can be calculated using the formula: VOUT = VREF x (1 + R1/R2), where VREF is the internal reference voltage, and R1 and R2 are the resistors in the feedback network.

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