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Single P-channel Enhancement-Mode MOSFET 8-SOIC
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
TPS1100DR by Texas Instruments is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 2500 |
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RFQ | ||
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Rochester Electronics | TPS1100 Single P-channel Enhancement-Mode MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 564 |
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$0.5870 / $0.9468 | Buy Now |
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LCSC | 15V 700m3V0.2A 791mW 1.5V 1 piece P-channel SOIC-8 MOSFETs ROHS | 86 |
|
$0.6712 / $0.9871 | Buy Now |
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TPS1100DR
Texas Instruments
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Datasheet
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TPS1100DR
Texas Instruments
Single P-channel Enhancement-Mode MOSFET 8-SOIC
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Part Package Code | SOIC | |
Package Description | SOIC-8 | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.39.00.01 | |
Samacsys Manufacturer | Texas Instruments | |
Additional Feature | LOGIC LEVEL COMPATIBLE, ESD PROTECTED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 15 V | |
Drain Current-Max (ID) | 1.6 A | |
Drain-source On Resistance-Max | 0.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e4 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 0.791 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for TPS1100DR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TPS1100DR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
TPS1100DRG4 | Texas Instruments | Check for Price | 1600mA, 15V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, GREEN, SOIC-8 | TPS1100DR vs TPS1100DRG4 |
A good PCB layout for the TPS1100DR involves placing the input and output capacitors close to the device, using a solid ground plane, and minimizing the length of the input and output traces. A 4-layer PCB with a dedicated power plane and a solid ground plane is recommended.
To ensure stability, it's essential to follow the recommended component values and PCB layout guidelines. Additionally, the output capacitor should be selected based on the specific application requirements, and the input capacitor should be chosen to ensure a stable input voltage.
The TPS1100DR can handle input voltages up to 18V, but it's recommended to operate within the specified input voltage range of 2.7V to 15V for optimal performance and reliability.
The TPS1100DR is rated for operation up to 125°C, but the device's performance and reliability may degrade at high temperatures. It's essential to consider the thermal design and heat dissipation in the system to ensure reliable operation.
The output voltage of the TPS1100DR can be calculated using the formula: VOUT = VREF x (1 + R1/R2), where VREF is the internal reference voltage, and R1 and R2 are the resistors in the feedback network.