Datasheets
TPW4R008NH by: Toshiba America Electronic Components

Nch 60V<VDSS≤150V, Power MOSFET

Part Details for TPW4R008NH by Toshiba America Electronic Components

Overview of TPW4R008NH by Toshiba America Electronic Components

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Applications Energy and Power Systems Renewable Energy Automotive

Price & Stock for TPW4R008NH

Part # Distributor Description Stock Price Buy
DISTI # TPW4R008NH,L1Q
Avnet Americas Trans MOSFET N-CH 80V 116A 8-Pin DSOP - Tape and Reel (Alt: TPW4R008NH,L1Q) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 32 Weeks, 0 Days Container: Reel 5000
  • 5,000 $1.0689
  • 10,000 $1.0508
  • 20,000 $1.0328
  • 30,000 $1.0148
  • 40,000 $0.9967
$0.9967 / $1.0689 Buy Now
DISTI # TPW4R008NH,L1Q
Avnet Americas Trans MOSFET N-CH 80V 116A 8-Pin DSOP - Tape and Reel (Alt: TPW4R008NH,L1Q) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 32 Weeks, 0 Days Container: Reel 5000
  • 5,000 $1.0689
  • 10,000 $1.0508
  • 20,000 $1.0328
  • 30,000 $1.0148
  • 40,000 $0.9967
$0.9967 / $1.0689 Buy Now

Part Details for TPW4R008NH

TPW4R008NH CAD Models

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TPW4R008NH Part Data Attributes:

TPW4R008NH Toshiba America Electronic Components
Buy Now Datasheet
Compare Parts:
TPW4R008NH Toshiba America Electronic Components Nch 60V<VDSS≤150V, Power MOSFET
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description DSOP-8
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 32 Weeks
Avalanche Energy Rating (Eas) 125 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 116 A
Drain-source On Resistance-Max 0.004 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-F5
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 440 A
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for TPW4R008NH

This table gives cross-reference parts and alternative options found for TPW4R008NH. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TPW4R008NH, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUK9E4R4-80E,127 N-channel TrenchMOS logic level FET TO-262 3-Pin NXP Semiconductors TPW4R008NH vs BUK9E4R4-80E,127
934066515127 120A, 80V, 0.0044ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, PLASTIC, TO-262, I2PAK-3 NXP Semiconductors TPW4R008NH vs 934066515127
IPP120N08S4-04 Power Field-Effect Transistor Infineon Technologies AG TPW4R008NH vs IPP120N08S4-04
BUK7E4R0-80E,127 N-channel TrenchMOS standard level FET TO-262 3-Pin NXP Semiconductors TPW4R008NH vs BUK7E4R0-80E,127
934066523127 120A, 80V, 0.0044ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN NXP Semiconductors TPW4R008NH vs 934066523127
STL130N8F7 N-channel 80 V, 3.0 mOhm typ., 120 A STripFET F7 Power MOSFET in PowerFLAT 5x6 package STMicroelectronics TPW4R008NH vs STL130N8F7
934066516127 120A, 80V, 0.004ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, PLASTIC, TO-262, I2PAK-3 NXP Semiconductors TPW4R008NH vs 934066516127
IPI120N08S4-04 Power Field-Effect Transistor Infineon Technologies AG TPW4R008NH vs IPI120N08S4-04

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