Part Details for TPW4R008NH by Toshiba America Electronic Components
Overview of TPW4R008NH by Toshiba America Electronic Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for TPW4R008NH
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
TPW4R008NH,L1Q
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Avnet Americas | Trans MOSFET N-CH 80V 116A 8-Pin DSOP - Tape and Reel (Alt: TPW4R008NH,L1Q) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 32 Weeks, 0 Days Container: Reel | 5000 |
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$0.9967 / $1.0689 | Buy Now |
DISTI #
TPW4R008NH,L1Q
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Avnet Americas | Trans MOSFET N-CH 80V 116A 8-Pin DSOP - Tape and Reel (Alt: TPW4R008NH,L1Q) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 32 Weeks, 0 Days Container: Reel | 5000 |
|
$0.9967 / $1.0689 | Buy Now |
Part Details for TPW4R008NH
TPW4R008NH CAD Models
TPW4R008NH Part Data Attributes:
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TPW4R008NH
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
TPW4R008NH
Toshiba America Electronic Components
Nch 60V<VDSS≤150V, Power MOSFET
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Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | DSOP-8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 32 Weeks | |
Avalanche Energy Rating (Eas) | 125 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 116 A | |
Drain-source On Resistance-Max | 0.004 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PDSO-F5 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 440 A | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for TPW4R008NH
This table gives cross-reference parts and alternative options found for TPW4R008NH. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TPW4R008NH, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BUK9E4R4-80E,127 | N-channel TrenchMOS logic level FET TO-262 3-Pin | NXP Semiconductors | TPW4R008NH vs BUK9E4R4-80E,127 |
934066515127 | 120A, 80V, 0.0044ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, PLASTIC, TO-262, I2PAK-3 | NXP Semiconductors | TPW4R008NH vs 934066515127 |
IPP120N08S4-04 | Power Field-Effect Transistor | Infineon Technologies AG | TPW4R008NH vs IPP120N08S4-04 |
BUK7E4R0-80E,127 | N-channel TrenchMOS standard level FET TO-262 3-Pin | NXP Semiconductors | TPW4R008NH vs BUK7E4R0-80E,127 |
934066523127 | 120A, 80V, 0.0044ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN | NXP Semiconductors | TPW4R008NH vs 934066523127 |
STL130N8F7 | N-channel 80 V, 3.0 mOhm typ., 120 A STripFET F7 Power MOSFET in PowerFLAT 5x6 package | STMicroelectronics | TPW4R008NH vs STL130N8F7 |
934066516127 | 120A, 80V, 0.004ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, PLASTIC, TO-262, I2PAK-3 | NXP Semiconductors | TPW4R008NH vs 934066516127 |
IPI120N08S4-04 | Power Field-Effect Transistor | Infineon Technologies AG | TPW4R008NH vs IPI120N08S4-04 |