Part Details for UJ3C120080K3S by Qorvo
Overview of UJ3C120080K3S by Qorvo
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for UJ3C120080K3S
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
47AK1776
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Newark | Mosfet, N-Ch, 12V, 33A, To-247-3, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:33A, Drain Source Voltage Vds:1.2Kv, No. Of Pins:3Pins, Rds(On) Test Voltage:12V, Power Dissipation:254.2W Rohs Compliant: Yes |Qorvo UJ3C120080K3S Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 1039 |
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$12.8500 / $17.8100 | Buy Now |
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DISTI #
2312-UJ3C120080K3S-ND
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DigiKey | SICFET N-CH 1200V 33A TO247-3 Min Qty: 1 Lead time: 44 Weeks Container: Tube |
5784 In Stock |
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$8.6250 / $10.2900 | Buy Now |
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DISTI #
431-UJ3C120080K3S
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Mouser Electronics | MOSFET 1200V/80mO,SICFET,G3,TO247-3 RoHS: Compliant | 42 |
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$8.6300 / $14.0800 | Buy Now |
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DISTI #
UJ3C120080K3S
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Avnet Silica | Silicon Carbide MOSFET, Single, N Channel, 33 A, 1.2 kV, 0.08 ohm, TO-247 (Alt: UJ3C120080K3S) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 6 Weeks, 3 Days | Silica - 0 |
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Buy Now | |
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DISTI #
4014263
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element14 Asia-Pacific | SIC SCHOTTKY DIODE, 1.2KV, 33A, TO-247 RoHS: Compliant Min Qty: 1 Container: Each | 919 |
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$11.6475 / $14.8583 | Buy Now |
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DISTI #
4014263
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Farnell | SIC SCHOTTKY DIODE, 1.2KV, 33A, TO-247 RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each | 919 |
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$10.5953 / $16.6945 | Buy Now |
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LCSC | TO-247-3 SiC MOSFETs ROHS | 3 |
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$8.2087 / $9.7972 | Buy Now |
Part Details for UJ3C120080K3S
UJ3C120080K3S CAD Models
UJ3C120080K3S Part Data Attributes:
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UJ3C120080K3S
Qorvo
Buy Now
Datasheet
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Compare Parts:
UJ3C120080K3S
Qorvo
Power Field-Effect Transistor, 33A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Junction Cascode FET, TO-247,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | QORVO INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 58.5 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 33 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | JUNCTION CASCODE | |
| Feedback Cap-Max (Crss) | 2.1 pF | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 254.2 W | |
| Pulsed Drain Current-Max (IDM) | 77 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |