Datasheets
UJ4SC075011B7S by:

Power Field-Effect Transistor, 104A I(D), 750V, 0.0142ohm, 1-Element, N-Channel, Silicon Carbide, Junction Cascode FET, D2PAK-7

Part Details for UJ4SC075011B7S by Qorvo

Overview of UJ4SC075011B7S by Qorvo

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Price & Stock for UJ4SC075011B7S

Part # Distributor Description Stock Price Buy
DISTI # 78AK8932
Newark Mosfet, N-Ch, 12V, 104A, D2Pak-7, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:104A, Drain Source Voltage Vds:750V, No. Of Pins:7Pins, Rds(On) Test Voltage:12V, Power Dissipation:357W Rohs Compliant: Yes |Qorvo UJ4SC075011B7S Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 709
  • 1 $35.3100
  • 25 $32.3500
  • 50 $30.0500
  • 100 $29.0700
  • 250 $28.0800
$28.0800 / $35.3100 Buy Now
DISTI # 2312-UJ4SC075011B7SCT-ND
DigiKey 750V/11MOHM, N-OFF SIC STACK CAS Min Qty: 1 Lead time: 44 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 9
In Stock
  • 1 $29.4000
  • 10 $26.1210
  • 100 $22.8462
  • 800 $19.4954
$19.4954 / $29.4000 Buy Now
DISTI # UJ4SC075011B7S
Avnet Americas Silicon Carbide MOSFET, Single, N Channel, 104 A, 750 V, 14.2 Milliohms, D2PAK, 7 Pins - Boxed Product (Development Kits) (Alt: UJ4SC075011B7S) Min Qty: 800 Package Multiple: 800 Lead time: 44 Weeks, 0 Days Container: Box 0
  • 1 $30.7680
  • 25 $27.1440
  • 100 $23.5200
  • 250 $19.9100
  • 500 $18.1000
$18.1000 / $30.7680 Buy Now
DISTI # 431-UJ4SC075011B7S
Mouser Electronics MOSFET 750V/11mO,SICFET,G4,TO263-7 RoHS: Compliant 759
  • 1 $30.7600
  • 25 $27.1400
  • 100 $23.5200
  • 250 $19.9100
  • 500 $18.8500
  • 800 $18.8500
$18.8500 / $30.7600 Buy Now
DISTI # UJ4SC075011B7S
Avnet Americas Silicon Carbide MOSFET, Single, N Channel, 104 A, 750 V, 14.2 Milliohms, D2PAK, 7 Pins - Boxed Product (Development Kits) (Alt: UJ4SC075011B7S) Min Qty: 800 Package Multiple: 800 Lead time: 44 Weeks, 0 Days Container: Box 0
  • 1 $30.7680
  • 25 $27.1440
  • 100 $23.5200
  • 250 $19.9100
  • 500 $18.1000
$18.1000 / $30.7680 Buy Now
DISTI # UJ4SC075011B7S
Avnet Americas Silicon Carbide MOSFET, Single, N Channel, 104 A, 750 V, 14.2 Milliohms, D2PAK, 7 Pins - Boxed Product (Development Kits) (Alt: UJ4SC075011B7S) Min Qty: 800 Package Multiple: 800 Lead time: 44 Weeks, 0 Days Container: Box 0
  • 1 $30.7680
  • 25 $27.1440
  • 100 $23.5200
  • 250 $19.9100
  • 500 $18.1000
$18.1000 / $30.7680 Buy Now
DISTI # UJ4SC075011B7S
Avnet Silica Silicon Carbide MOSFET, Single, N Channel, 104 A, 750 V, 14.2 Milliohms, D2PAK, 7 Pins (Alt: UJ4SC075011B7S) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 6 Weeks, 3 Days Silica - 0
Buy Now
DISTI # 4221981
element14 Asia-Pacific SIC MOSFET, N-CH, 750V, D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape 509
  • 1 $30.6766
  • 5 $28.8713
  • 10 $27.0586
  • 50 $26.0458
$26.0458 / $30.6766 Buy Now
DISTI # 4221981
Farnell SIC MOSFET, N-CH, 750V, D2PAK RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Cut Tape 509
  • 1 $36.1053
  • 5 $33.9822
  • 10 $31.8591
  • 50 $29.7360
  • 100 $27.6003
$27.6003 / $36.1053 Buy Now

Part Details for UJ4SC075011B7S

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UJ4SC075011B7S Part Data Attributes

UJ4SC075011B7S Qorvo
Buy Now Datasheet
Compare Parts:
UJ4SC075011B7S Qorvo Power Field-Effect Transistor, 104A I(D), 750V, 0.0142ohm, 1-Element, N-Channel, Silicon Carbide, Junction Cascode FET, D2PAK-7
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer QORVO INC
Package Description D2PAK-7
Reach Compliance Code unknown
Factory Lead Time 44 Weeks
Samacsys Manufacturer Qorvo
Avalanche Energy Rating (Eas) 151 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR
DS Breakdown Voltage-Min 750 V
Drain Current-Max (ID) 104 A
Drain-source On Resistance-Max 0.0142 Ω
FET Technology JUNCTION CASCODE
Feedback Cap-Max (Crss) 1.2 pF
JESD-30 Code R-PSSO-G7
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 7
Operating Mode DEPLETION MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 357 W
Pulsed Drain Current-Max (IDM) 300 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

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