Part Details for UPA1728G-E1-AT by Renesas Electronics Corporation
Overview of UPA1728G-E1-AT by Renesas Electronics Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Internet of Things (IoT)
Computing and Data Storage
Aerospace and Defense
Healthcare
Telecommunications
Automotive
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
UPA1728G-E2-AT | Renesas Electronics Corporation | Power MOSFETs for Automotive | |
UPA1728G(0)-E1-AY | Renesas Electronics Corporation | Power MOSFETs for Automotive, SOP, / | |
FIDO5100BBCZ | Analog Devices | REM Switch |
Price & Stock for UPA1728G-E1-AT
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
2156-UPA1728G-E1-AT-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 219 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
2284 In Stock |
|
$1.3700 | Buy Now |
DISTI #
UPA1728G-E1-AT
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Avnet Americas | Switching Power MOSFET N-Channel 60V ?9A 8-Pin PowerSOP - Bulk (Alt: UPA1728G-E1-AT) RoHS: Compliant Min Qty: 264 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Bulk | 2284 Partner Stock |
|
$1.3800 | Buy Now |
|
Rochester Electronics | N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 2284 |
|
$1.1700 / $1.3800 | Buy Now |
Part Details for UPA1728G-E1-AT
UPA1728G-E1-AT CAD Models
UPA1728G-E1-AT Part Data Attributes
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UPA1728G-E1-AT
Renesas Electronics Corporation
Buy Now
Datasheet
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Compare Parts:
UPA1728G-E1-AT
Renesas Electronics Corporation
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,9A I(D),SO
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Configuration | SINGLE | |
Drain Current-Max (ID) | 9 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Number of Elements | 1 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2 W | |
Surface Mount | YES |