Part Details for UPA2350BT1G-E4-A by Renesas Electronics Corporation
Overview of UPA2350BT1G-E4-A by Renesas Electronics Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Internet of Things (IoT)
Computing and Data Storage
Aerospace and Defense
Healthcare
Telecommunications
Automotive
Price & Stock for UPA2350BT1G-E4-A
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-UPA2350BT1G-E4-A-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 677 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
955000 In Stock |
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$0.4400 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 2-Element, N-Channel MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 955000 |
|
$0.3808 / $0.4480 | Buy Now |
Part Details for UPA2350BT1G-E4-A
UPA2350BT1G-E4-A CAD Models
UPA2350BT1G-E4-A Part Data Attributes:
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UPA2350BT1G-E4-A
Renesas Electronics Corporation
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Datasheet
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UPA2350BT1G-E4-A
Renesas Electronics Corporation
N-Channel Mos Field Effect Transistor For Switching, EFLIP(BGA), /Embossed Tape
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Part Package Code | EFLIP(BGA) | |
| Package Description | LEAD FREE, EFLIP, 4 PIN | |
| Pin Count | 0 | |
| Reach Compliance Code | unknown | |
| ECCN Code | 5A002 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Renesas Electronics | |
| Configuration | COMPLEX | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-XBGA-B4 | |
| JESD-609 Code | e6 | |
| Number of Elements | 2 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | SQUARE | |
| Package Style | GRID ARRAY | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.3 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN BISMUTH | |
| Terminal Form | BALL | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |