Datasheets
UPA2591T1H-T1-AT by: Renesas Electronics Corporation

N-Channel Mos Field Effect Transistor For Switching, VSOF, /Embossed Tape

Part Details for UPA2591T1H-T1-AT by Renesas Electronics Corporation

Overview of UPA2591T1H-T1-AT by Renesas Electronics Corporation

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Applications Consumer Electronics Audio and Video Systems Healthcare Entertainment and Gaming

Price & Stock for UPA2591T1H-T1-AT

Part # Distributor Description Stock Price Buy
DISTI # 2156-UPA2591T1H-T1-AT-ND
DigiKey N-CHANNEL POWER MOSFET Min Qty: 650 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 93000
In Stock
  • 650 $0.4600
$0.4600 Buy Now
Rochester Electronics Power Field-Effect Transistor, 4A, 30V, N-Channel MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 93000
  • 1 $0.4667
  • 25 $0.4574
  • 100 $0.4387
  • 500 $0.4200
  • 1,000 $0.3967
$0.3967 / $0.4667 Buy Now

Part Details for UPA2591T1H-T1-AT

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UPA2591T1H-T1-AT Part Data Attributes

UPA2591T1H-T1-AT Renesas Electronics Corporation
Buy Now Datasheet
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UPA2591T1H-T1-AT Renesas Electronics Corporation N-Channel Mos Field Effect Transistor For Switching, VSOF, /Embossed Tape
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer RENESAS ELECTRONICS CORP
Part Package Code VSOF
Package Description LEAD FREE, 2429, VSOF-8
Pin Count 8
Manufacturer Package Code PVSF0008JA-A8
Reach Compliance Code unknown
ECCN Code 5A002
Factory Lead Time 4 Weeks
Samacsys Manufacturer Renesas Electronics
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 4 A
Drain-source On Resistance-Max 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs) 1.5 W
Pulsed Drain Current-Max (IDM) 16 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for UPA2591T1H-T1-AT

This table gives cross-reference parts and alternative options found for UPA2591T1H-T1-AT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of UPA2591T1H-T1-AT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI4532DY Dual N & P Channel Enhancement Mode Field Effect Transistor, 2500-REEL onsemi UPA2591T1H-T1-AT vs SI4532DY
SI4532DYD84Z Power Field-Effect Transistor, 3.9A I(D), 30V, 0.065ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation UPA2591T1H-T1-AT vs SI4532DYD84Z
SI4532DYS62Z Power Field-Effect Transistor, 3.9A I(D), 30V, 0.065ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation UPA2591T1H-T1-AT vs SI4532DYS62Z
SI4532DYF011 Power Field-Effect Transistor, 3.9A I(D), 30V, 0.065ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation UPA2591T1H-T1-AT vs SI4532DYF011
QS8M12TCR Power Field-Effect Transistor, 4A I(D), 30V, 0.063ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT8, 8 PIN ROHM Semiconductor UPA2591T1H-T1-AT vs QS8M12TCR

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