Part Details for UPA2591T1H-T1-AT by Renesas Electronics Corporation
Overview of UPA2591T1H-T1-AT by Renesas Electronics Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Consumer Electronics
Audio and Video Systems
Healthcare
Entertainment and Gaming
Price & Stock for UPA2591T1H-T1-AT
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-UPA2591T1H-T1-AT-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 650 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
93000 In Stock |
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$0.4600 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 4A, 30V, N-Channel MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 93000 |
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$0.3967 / $0.4667 | Buy Now |
Part Details for UPA2591T1H-T1-AT
UPA2591T1H-T1-AT CAD Models
UPA2591T1H-T1-AT Part Data Attributes
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UPA2591T1H-T1-AT
Renesas Electronics Corporation
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Datasheet
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UPA2591T1H-T1-AT
Renesas Electronics Corporation
N-Channel Mos Field Effect Transistor For Switching, VSOF, /Embossed Tape
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
Part Package Code | VSOF | |
Package Description | LEAD FREE, 2429, VSOF-8 | |
Pin Count | 8 | |
Manufacturer Package Code | PVSF0008JA-A8 | |
Reach Compliance Code | unknown | |
ECCN Code | 5A002 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Renesas Electronics | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 4 A | |
Drain-source On Resistance-Max | 0.07 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F8 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
Power Dissipation-Max (Abs) | 1.5 W | |
Pulsed Drain Current-Max (IDM) | 16 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for UPA2591T1H-T1-AT
This table gives cross-reference parts and alternative options found for UPA2591T1H-T1-AT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of UPA2591T1H-T1-AT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SI4532DY | Dual N & P Channel Enhancement Mode Field Effect Transistor, 2500-REEL | onsemi | UPA2591T1H-T1-AT vs SI4532DY |
SI4532DYD84Z | Power Field-Effect Transistor, 3.9A I(D), 30V, 0.065ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | UPA2591T1H-T1-AT vs SI4532DYD84Z |
SI4532DYS62Z | Power Field-Effect Transistor, 3.9A I(D), 30V, 0.065ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | UPA2591T1H-T1-AT vs SI4532DYS62Z |
SI4532DYF011 | Power Field-Effect Transistor, 3.9A I(D), 30V, 0.065ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | UPA2591T1H-T1-AT vs SI4532DYF011 |
QS8M12TCR | Power Field-Effect Transistor, 4A I(D), 30V, 0.063ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT8, 8 PIN | ROHM Semiconductor | UPA2591T1H-T1-AT vs QS8M12TCR |