Part Details for UPA2680T1E-E2-AT by Renesas Electronics Corporation
Overview of UPA2680T1E-E2-AT by Renesas Electronics Corporation
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Applications
Consumer Electronics
Audio and Video Systems
Price & Stock for UPA2680T1E-E2-AT
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | Power Field-Effect Transistor, N-Channel MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 567000 |
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$0.5077 / $0.5973 | Buy Now |
Part Details for UPA2680T1E-E2-AT
UPA2680T1E-E2-AT CAD Models
UPA2680T1E-E2-AT Part Data Attributes
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UPA2680T1E-E2-AT
Renesas Electronics Corporation
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Datasheet
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UPA2680T1E-E2-AT
Renesas Electronics Corporation
N-Channel Mosfet With Schottky Barrier Diode For Switching, 6LD3X3MLP, /Embossed Tape
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Part Package Code | 6LD3X3MLP | |
| Pin Count | 0 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Renesas Electronics | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 3 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Operating Temperature-Max | 150 °C | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.3 W | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN |