Part Details for UPA2718AGR-E1-AT by Renesas Electronics Corporation
Overview of UPA2718AGR-E1-AT by Renesas Electronics Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Audio and Video Systems
Entertainment and Gaming
Price & Stock for UPA2718AGR-E1-AT
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | UPA2718 - Power Field-Effect Transistor, 13A, 30V, P-Channel MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 15000 |
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$0.8727 / $1.0300 | Buy Now |
Part Details for UPA2718AGR-E1-AT
UPA2718AGR-E1-AT CAD Models
UPA2718AGR-E1-AT Part Data Attributes:
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UPA2718AGR-E1-AT
Renesas Electronics Corporation
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Datasheet
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UPA2718AGR-E1-AT
Renesas Electronics Corporation
Switching N-Channel Power MOSFET, SOP, /Embossed Tape
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Part Package Code | SOP | |
| Package Description | LEAD FREE, POWER, SOP-8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | PRSP0008DN-A8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | 5A002 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Renesas Electronics | |
| Avalanche Energy Rating (Eas) | 16.9 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.0182 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 130 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |