Part Details for VMK165-007T by IXYS Corporation
Overview of VMK165-007T by IXYS Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for VMK165-007T
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
VMK165-007T-ND
|
DigiKey | MOSFET 2N-CH 70V 165A TO240AA Min Qty: 36 Lead time: 15 Weeks Container: Box | Limited Supply - Call |
|
$48.4978 | Buy Now |
Part Details for VMK165-007T
VMK165-007T CAD Models
VMK165-007T Part Data Attributes:
|
VMK165-007T
IXYS Corporation
Buy Now
Datasheet
|
Compare Parts:
VMK165-007T
IXYS Corporation
Power Field-Effect Transistor, 165A I(D), 70V, 0.006ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-240AA, TO-240AA, 7 PIN
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Part Package Code | TO-240AA | |
Package Description | TO-240AA, 7 PIN | |
Pin Count | 7 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Configuration | COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 70 V | |
Drain Current-Max (ID) | 165 A | |
Drain-source On Resistance-Max | 0.006 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-240AA | |
JESD-30 Code | R-PUFM-X7 | |
Number of Elements | 2 | |
Number of Terminals | 7 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 390 W | |
Pulsed Drain Current-Max (IDM) | 660 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |