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VMM85-02F by:

Power Field-Effect Transistor, 84A I(D), 200V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Part Details for VMM85-02F by IXYS Corporation

Overview of VMM85-02F by IXYS Corporation

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Applications Consumer Electronics

Price & Stock for VMM85-02F

Part # Distributor Description Stock Price Buy
DISTI # VMM85-02F-ND
DigiKey MOSFET 2N-CH 200V 84A Y4-M6 Lead time: 24 Weeks Container: Box Temporarily Out of Stock
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Part Details for VMM85-02F

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VMM85-02F Part Data Attributes

VMM85-02F IXYS Corporation
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VMM85-02F IXYS Corporation Power Field-Effect Transistor, 84A I(D), 200V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection ISOLATED
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 84 A
Drain-source On Resistance-Max 0.02 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 380 W
Pulsed Drain Current-Max (IDM) 335 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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