Part Details for VS-GB150YG120NT by Vishay Intertechnologies
Overview of VS-GB150YG120NT by Vishay Intertechnologies
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for VS-GB150YG120NT
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
55AC4318
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Newark | Output & Sw Modules - Econo Igbt-E3 |Vishay VS-GB150YG120NT Min Qty: 10 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for VS-GB150YG120NT
VS-GB150YG120NT CAD Models
VS-GB150YG120NT Part Data Attributes
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VS-GB150YG120NT
Vishay Intertechnologies
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Datasheet
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VS-GB150YG120NT
Vishay Intertechnologies
Insulated Gate Bipolar Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | MODULE-26 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Date Of Intro | 2016-07-19 | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 182 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| Gate-Emitter Thr Voltage-Max | 6.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PUFM-X26 | |
| Number of Elements | 4 | |
| Number of Terminals | 26 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 892 W | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 621 ns | |
| Turn-on Time-Nom (ton) | 563 ns |