Part Details for VS-GT300YH120N by Vishay Intertechnologies
Overview of VS-GT300YH120N by Vishay Intertechnologies
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for VS-GT300YH120N
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
43X1833
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Newark | Modules Igbt - Diap Igbt |Vishay VS-GT300YH120N Min Qty: 12 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$165.1600 / $175.2500 | Buy Now |
|
DISTI #
VS-GT300YH120N
|
Avnet Americas | OUTPUT & SW MODULES - DIAP IGBT - Bulk (Alt: VS-GT300YH120N) RoHS: Compliant Min Qty: 12 Package Multiple: 12 Lead time: 14 Weeks, 0 Days Container: Bulk | 0 |
|
$170.2019 / $216.2195 | Buy Now |
|
DISTI #
78-VS-GT300YH120N
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Mouser Electronics | IGBT Modules Output & SW Modules - DIAP IGBT RoHS: Compliant | 0 |
|
$169.0600 / $169.3600 | Order Now |
|
DISTI #
VS-GT300YH120N
|
TTI | IGBT Modules Output & SW Modules - DIAP IGBT RoHS: Compliant pbFree: Pb-Free Min Qty: 12 Package Multiple: 12 | Americas - 0 |
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$170.5900 | Buy Now |
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DISTI #
VS-GT300YH120N
|
Avnet Americas | OUTPUT & SW MODULES - DIAP IGBT - Bulk (Alt: VS-GT300YH120N) RoHS: Compliant Min Qty: 12 Package Multiple: 12 Lead time: 14 Weeks, 0 Days Container: Bulk | 0 |
|
$170.2019 / $216.2195 | Buy Now |
|
DISTI #
VS-GT300YH120N
|
TME | Module: IGBT, diode/transistor, Urmax: 1.2kV, Ic: 300A, Trench Min Qty: 1 | 0 |
|
$181.5100 / $257.7700 | RFQ |
|
DISTI #
VS-GT300YH120N
|
Avnet Americas | OUTPUT & SW MODULES - DIAP IGBT - Bulk (Alt: VS-GT300YH120N) RoHS: Compliant Min Qty: 12 Package Multiple: 12 Lead time: 14 Weeks, 0 Days Container: Bulk | 0 |
|
$170.2019 / $216.2195 | Buy Now |
Part Details for VS-GT300YH120N
VS-GT300YH120N CAD Models
VS-GT300YH120N Part Data Attributes
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VS-GT300YH120N
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
VS-GT300YH120N
Vishay Intertechnologies
Insulated Gate Bipolar Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | MODULE-9 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 400 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X9 | |
| Number of Elements | 2 | |
| Number of Terminals | 9 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 167 W | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 834 ns | |
| Turn-on Time-Nom (ton) | 342 ns |