Datasheets
VS-GT90DA120U by:

Insulated Gate Bipolar Transistor, 169A I(C), 1200V V(BR)CES, N-Channel, SOT-227, 4 PIN

Part Details for VS-GT90DA120U by Vishay Intertechnologies

Overview of VS-GT90DA120U by Vishay Intertechnologies

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Applications Industrial Automation Electronic Manufacturing

Price & Stock for VS-GT90DA120U

Part # Distributor Description Stock Price Buy
DISTI # 78AK9059
Newark Igbt Module, 1.2Kv, 169A, 781W, Sot-227 Rohs Compliant: Yes |Vishay VS-GT90DA120U Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 140
  • 1 $38.7800
  • 5 $36.6700
  • 10 $34.5600
  • 25 $33.1600
  • 50 $31.7400
  • 100 $30.3400
$30.3400 / $38.7800 Buy Now
DISTI # 64AK9123
Newark Modules Igbt - Sot-227 Igbt |Vishay VS-GT90DA120U Min Qty: 160 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 100 $36.5200
  • 250 $35.2800
$35.2800 / $36.5200 Buy Now
DISTI # VS-GT90DA120U
Avnet Americas Transistor IGBT Module N-Channel 1200V 169A ±20V Screw Mount - Bulk (Alt: VS-GT90DA120U) RoHS: Not Compliant Min Qty: 160 Package Multiple: 1 Lead time: 18 Weeks, 0 Days Container: Bulk 0
  • 160 $35.3774
  • 170 $34.2428
  • 330 $33.1083
  • 800 $31.7674
  • 1,600 $30.7360
  • 8,000 $29.2920
  • 16,000 $27.8481
$27.8481 / $35.3774 Buy Now
DISTI # 78-VS-GT90DA120U
Mouser Electronics IGBT Transistors SOT-227 - SINGLE SWITCH IGBT + RoHS: Compliant 498
  • 1 $38.0400
  • 10 $33.9000
  • 100 $29.7600
$29.7600 / $38.0400 Buy Now
DISTI # VS-GT90DA120U
TTI IGBT Transistors SOT-227 - SINGLE SWITCH IGBT + RoHS: Compliant pbFree: Pb-Free Min Qty: 160 Package Multiple: 160 Container: Tube Americas - 0
  • 160 $25.8000
$25.8000 Buy Now
DISTI # VS-GT90DA120U
Avnet Americas Transistor IGBT Module N-Channel 1200V 169A ±20V Screw Mount - Bulk (Alt: VS-GT90DA120U) RoHS: Not Compliant Min Qty: 160 Package Multiple: 1 Lead time: 18 Weeks, 0 Days Container: Bulk 0
  • 160 $35.3774
  • 170 $34.2428
  • 330 $33.1083
  • 800 $31.7674
  • 1,600 $30.7360
  • 8,000 $29.2920
  • 16,000 $27.8481
$27.8481 / $35.3774 Buy Now
DISTI # VS-GT90DA120U
TME Module: IGBT, single transistor, Urmax: 1.2kV, Ic: 106A, SOT227B Min Qty: 1 0
  • 1 $52.2400
  • 3 $46.3500
  • 10 $42.9300
  • 25 $39.6100
  • 100 $36.7200
$36.7200 / $52.2400 RFQ
DISTI # VS-GT90DA120U
Avnet Americas Transistor IGBT Module N-Channel 1200V 169A ±20V Screw Mount - Bulk (Alt: VS-GT90DA120U) RoHS: Not Compliant Min Qty: 160 Package Multiple: 1 Lead time: 18 Weeks, 0 Days Container: Bulk 0
  • 160 $35.3774
  • 170 $34.2428
  • 330 $33.1083
  • 800 $31.7674
  • 1,600 $30.7360
  • 8,000 $29.2920
  • 16,000 $27.8481
$27.8481 / $35.3774 Buy Now
DISTI # 4217900
element14 Asia-Pacific IGBT MODULE, 1.2KV, 169A, 781W, SOT-227 RoHS: Compliant Min Qty: 1 Container: Each 140
  • 1 $37.8410
  • 5 $35.7835
  • 10 $33.7260
  • 50 $32.4739
  • 100 $31.4781
$31.4781 / $37.8410 Buy Now
DISTI # 4217900
Farnell IGBT MODULE, 1.2KV, 169A, 781W, SOT-227 RoHS: Compliant Min Qty: 1 Lead time: 21 Weeks, 1 Days Container: Each 140
  • 1 $37.9559
  • 5 $35.8978
  • 10 $33.8273
  • 50 $32.6922
  • 100 $31.5447
$31.5447 / $37.9559 Buy Now

Part Details for VS-GT90DA120U

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VS-GT90DA120U Part Data Attributes

VS-GT90DA120U Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
VS-GT90DA120U Vishay Intertechnologies Insulated Gate Bipolar Transistor, 169A I(C), 1200V V(BR)CES, N-Channel, SOT-227, 4 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SOT-227, 4 PIN
Reach Compliance Code unknown
Factory Lead Time 18 Weeks
Case Connection ISOLATED
Collector Current-Max (IC) 169 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 7.6 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 781 W
Reference Standard UL APPROVED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 270 ns
Turn-on Time-Nom (ton) 61 ns
VCEsat-Max 2.6 V

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