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Power Field-Effect Transistor, 47A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH5871
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Newark | Bipolar Module - Other V1A/B Pack/Box |Littelfuse VUM33-05N RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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VUM33-05N
Littelfuse Inc
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Datasheet
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VUM33-05N
Littelfuse Inc
Power Field-Effect Transistor, 47A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | LITTELFUSE INC | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | BRIDGE RECTIFIER AVAILABLE | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 47 A | |
Drain-source On Resistance-Max | 0.12 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XUFM-X8 | |
JESD-609 Code | e4 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 595 W | |
Pulsed Drain Current-Max (IDM) | 130 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | SILVER | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |