Datasheets
W971GG6KB-25 by: Winbond Electronics Corp

DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84

Part Details for W971GG6KB-25 by Winbond Electronics Corp

Results Overview of W971GG6KB-25 by Winbond Electronics Corp

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W971GG6KB-25 Information

W971GG6KB-25 by Winbond Electronics Corp is a DRAM.
DRAMs are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Price & Stock for W971GG6KB-25

Part # Distributor Description Stock Price Buy
Bristol Electronics   20
RFQ
Win Source Electronics DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin WBGA / IC SDRAM 1GBIT 400MHZ 84BGA 25000
  • 19 $2.7678
  • 39 $2.5893
  • 60 $2.5000
  • 87 $2.3214
  • 113 $2.2321
  • 140 $2.1429
$2.1429 / $2.7678 Buy Now

Part Details for W971GG6KB-25

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W971GG6KB-25 Part Data Attributes

W971GG6KB-25 Winbond Electronics Corp
Buy Now Datasheet
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W971GG6KB-25 Winbond Electronics Corp DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer WINBOND ELECTRONICS CORP
Package Description 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.32
Samacsys Manufacturer Winbond
Access Mode MULTI BANK PAGE BURST
Access Time-Max 0.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 400 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B84
Length 12.5 mm
Memory Density 1073741824 bit
Memory IC Type DDR2 DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 84
Number of Words 67108864 words
Number of Words Code 64000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min
Organization 64MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA84,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 4,8
Standby Current-Max 0.008 A
Supply Current-Max 0.185 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 8 mm

Alternate Parts for W971GG6KB-25

This table gives cross-reference parts and alternative options found for W971GG6KB-25. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W971GG6KB-25, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IS43DR16640C-25DBLI Integrated Silicon Solution Inc $4.5288 DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, TWBGA-84 W971GG6KB-25 vs IS43DR16640C-25DBLI
MT47H64M16NF-25E:MTR Micron Technology Inc Check for Price DDR DRAM, 64MX16, CMOS, PBGA84, FBGA-84 W971GG6KB-25 vs MT47H64M16NF-25E:MTR
IS43DR16640C-25DBL Integrated Silicon Solution Inc $2.4163 DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, TWBGA-84 W971GG6KB-25 vs IS43DR16640C-25DBL
MT47H64M16NF-25EXIT:M Micron Technology Inc Check for Price DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 W971GG6KB-25 vs MT47H64M16NF-25EXIT:M
MT47H64M16NF-25EAIT:M Micron Technology Inc Check for Price DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 W971GG6KB-25 vs MT47H64M16NF-25EAIT:M
W971GG6KB25I Winbond Electronics Corp Check for Price DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84 W971GG6KB-25 vs W971GG6KB25I
MT47H64M16NF-25E:M Micron Technology Inc $3.8106 DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 W971GG6KB-25 vs MT47H64M16NF-25E:M
Part Number Manufacturer Composite Price Description Compare
K4T1G164QQ-HCE70 Samsung Semiconductor Check for Price DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 W971GG6KB-25 vs K4T1G164QQ-HCE70
NT5TU64M16DG-ADI Nanya Technology Corporation Check for Price DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, GREEN, BGA-84 W971GG6KB-25 vs NT5TU64M16DG-ADI
MT47H64M16HR-25E:HTR Micron Technology Inc Check for Price DDR DRAM, 64KX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 W971GG6KB-25 vs MT47H64M16HR-25E:HTR
HYB18T1G160CF-2.5 Qimonda AG Check for Price DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 W971GG6KB-25 vs HYB18T1G160CF-2.5
MT47H32M16CC-25AT:B Micron Technology Inc Check for Price DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 12 X 12.50 MM, ROHS COMPLIANT, FBGA-84 W971GG6KB-25 vs MT47H32M16CC-25AT:B
EDE1116ACBG-8E-E Elpida Memory Inc Check for Price DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 W971GG6KB-25 vs EDE1116ACBG-8E-E
K4T1G164QD-ZCE70 Samsung Semiconductor Check for Price DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, FBGA-84 W971GG6KB-25 vs K4T1G164QD-ZCE70
MT47H64M16B7-25IT:D Micron Technology Inc Check for Price DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 10 X 16.50 MM, ROHS COMPLIANT, FBGA-84 W971GG6KB-25 vs MT47H64M16B7-25IT:D
MT47H32M16GC-25EAT:B Micron Technology Inc Check for Price DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 12 X 12.50 MM, FBGA-84 W971GG6KB-25 vs MT47H32M16GC-25EAT:B
NT5TU64M16HG-AC Nanya Technology Corporation Check for Price DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-84 W971GG6KB-25 vs NT5TU64M16HG-AC

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