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Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, TSOP2-54
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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NAC | 64Mb, SDR SDRAM, x16, 166MHz, 46nm, TSOPII 54 Package RoHS: Compliant Min Qty: 108 Package Multiple: 108 | 0 |
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$1.0000 / $1.1500 | Buy Now |
DISTI #
C1S810600023084
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Chip1Stop | 64Mb, SDR SDRAM, x16, 166MHz, 46nm RoHS: Compliant pbFree: Yes Container: Tray | 108 |
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$1.1600 / $1.5500 | Buy Now |
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CHIPMALL.COM LIMITED | 64Mbit 166MHz TSOPII-54-10.2mm SDRAM ROHS | 1290 |
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$0.4741 / $0.9061 | Buy Now |
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Win Source Electronics | IC SDRAM 64MBIT 166MHZ 54TSOP | 20000 |
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$0.4395 / $0.5676 | Buy Now |
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W9864G6KH-6
Winbond Electronics Corp
Buy Now
Datasheet
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Compare Parts:
W9864G6KH-6
Winbond Electronics Corp
Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, TSOP2-54
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | WINBOND ELECTRONICS CORP | |
Package Description | TSOP2-54 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Samacsys Manufacturer | Winbond | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 5 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 166 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 1,2,4,8 | |
JESD-30 Code | R-PDSO-G54 | |
Length | 22.22 mm | |
Memory Density | 67108864 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 54 | |
Number of Words | 4194304 words | |
Number of Words Code | 4000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 4MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Equivalence Code | TSOP54,.46,32 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Refresh Cycles | 4096 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 1,2,4,8,FP | |
Standby Current-Max | 0.025 A | |
Supply Current-Max | 0.075 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Width | 10.16 mm |
This table gives cross-reference parts and alternative options found for W9864G6KH-6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W9864G6KH-6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
W9864G6JB-6I | Winbond Electronics Corp | Check for Price | Synchronous DRAM, 4MX16, 5ns, CMOS, PBGA60, VFBGA-60 | W9864G6KH-6 vs W9864G6JB-6I |
M12L64164A-5BG2Y | Elite Semiconductor Memory Technology Inc | Check for Price | Synchronous DRAM, 4MX16, 5ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VBGA-54 | W9864G6KH-6 vs M12L64164A-5BG2Y |
W9864G6JB-6 | Winbond Electronics Corp | Check for Price | Synchronous DRAM, 4MX16, 5ns, CMOS, PBGA60, VFBGA-60 | W9864G6KH-6 vs W9864G6JB-6 |
M12L64164A-5TG2Y | Elite Semiconductor Memory Technology Inc | Check for Price | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 | W9864G6KH-6 vs M12L64164A-5TG2Y |
M12L64164A-5BIG2Y | Elite Semiconductor Memory Technology Inc | Check for Price | Synchronous DRAM, 4MX16, 5ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VBGA-54 | W9864G6KH-6 vs M12L64164A-5BIG2Y |
W9864G6KB-6 | Winbond Electronics Corp | Check for Price | Synchronous DRAM, 4MX16, 5ns, CMOS, PBGA60, 6.40 X 10.10 MM, 0.65 MM PITCH, ROHS COMPLIANT, VFBGA-60 | W9864G6KH-6 vs W9864G6KB-6 |
M12L64164A-5TVG2Y | Elite Semiconductor Memory Technology Inc | Check for Price | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 | W9864G6KH-6 vs M12L64164A-5TVG2Y |
M12L64164A-5TIG2C | Elite Semiconductor Memory Technology Inc | Check for Price | Synchronous DRAM, | W9864G6KH-6 vs M12L64164A-5TIG2C |