WAB400M12BM3
Description: Power Field-Effect Transistor,

Overview of WAB400M12BM3 by Wolfspeed

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  • Distributor Offerings: ( 3 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for WAB400M12BM3 by Wolfspeed

Part # Manufacturer Description Stock Price Buy
DISTI # 1697-WAB400M12BM3-ND
DigiKey SIC 2N-CH 1200V 468A MODULE Min Qty: 1 Lead time: 30 Weeks Container: Bulk 21
In Stock
  • 1 $1,072.9600
$1,072.9600 Buy Now
DISTI # 941-WAB400M12BM3
Mouser Electronics MOSFET Modules SiC, Module, 400A, 1200V, 62mm, BM3, Conduction Optimized, Industrial, THB-80 RoHS: Not Compliant 9
  • 1 $1,072.7300
$1,072.7300 Buy Now
DISTI # WAB400M12BM3
Richardson RFPD SILICON CARBIDE MOSFET MODULES RoHS: Compliant Min Qty: 1 0
  • 1 $930.0000
$930.0000 Buy Now

CAD Models for WAB400M12BM3 by Wolfspeed
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Part Data Attributes for WAB400M12BM3 by Wolfspeed

WAB400M12BM3
Wolfspeed
-
-
Part Life Cycle Code
Not Recommended
Ihs Manufacturer
WOLFSPEED INC
Reach Compliance Code
unknown
ECCN Code
EAR99
Samacsys Manufacturer
Wolfspeed
Case Connection
ISOLATED
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
1200 V
Drain-source On Resistance-Max
0.00425 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
62.5 pF
JESD-30 Code
R-PUFM-X7
Number of Elements
2
Number of Terminals
7
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Operating Temperature-Min
-40 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
800 A
Reference Standard
IEC-60747-8-4
Surface Mount
NO
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
Transistor Application
SWITCHING
Transistor Element Material
SILICON CARBIDE
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    Power Field-Effect Transistor,
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