Part Details for WMS20N700SKX by WeEn Semiconductor Co Ltd
Results Overview of WMS20N700SKX by WeEn Semiconductor Co Ltd
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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WMS20N700SKX Information
WMS20N700SKX by WeEn Semiconductor Co Ltd is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for WMS20N700SKX
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
WMS20N700SKX
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Avnet Americas | WMS20N700SK/SOT23/REEL 7\\" Q1/T1 *STANDARD MARK SMD - Tape and Reel (Alt: WMS20N700SKX) RoHS: Compliant Min Qty: 15000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.0163 | Buy Now |
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DISTI #
WMS20N700SKX
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TME | Transistor: N-MOSFET, unipolar, 20V, 2.8A, Idm: 14A, 1.4W, SOT23-3 Min Qty: 1 | 0 |
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$0.0226 / $0.2708 | RFQ |
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DISTI #
WMS20N700SKX
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Avnet Silica | WMS20N700SKSOT23REEL 7 Q1T1 STANDARD MARK SMD (Alt: WMS20N700SKX) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for WMS20N700SKX
WMS20N700SKX CAD Models
WMS20N700SKX Part Data Attributes
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WMS20N700SKX
WeEn Semiconductor Co Ltd
Buy Now
Datasheet
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WMS20N700SKX
WeEn Semiconductor Co Ltd
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | WEEN SEMICONDUCTORS CO LTD | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 3.5 A | |
| Drain-source On Resistance-Max | 0.07 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 25 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 1.4 W | |
| Power Dissipation-Max (Abs) | 1.4 W | |
| Pulsed Drain Current-Max (IDM) | 14 A | |
| Reference Standard | IEC-60134 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |